Controlled Self-Assembly of Nanocrystalline Arrays Studied by 3D Kinetic Monte Carlo Modeling

Bhuiyan, A.; Dew, S. K.; Stepanova, Maria

doi:10.1021/jp205791t

Cited by 5 publications

(4 citation statements)

References 75 publications

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“…However, to the eye of both the theoretical and experimental communities working on the topic, the physical nature of InAs QD formation seems to be rather plain and "easy" and can be understood in terms of some universal law or a generic model describing the motion of individual atoms on the growth surface (see, for example, Refs. [20][21][22][23][24]). From this viewpoint, the formation of QDs should be an ordinary epitaxial growth process as implemented via individual atomistic events (deposition, adatom diffusion and attachment to step edges) on the growth surface.…”

Section: Formation Of Inas Qds Is Difficult To Understandmentioning

confidence: 99%

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Jin

2015

Front. Phys.

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Currently, the nature of self-assembly of three-dimensional epitaxial islands or quantum dots (QDs) in a lattice-mismatched heteroepitaxial growth system, such as InAs/GaAs(001) and Ge/Si(001) as fabricated by molecular beam epitaxy (MBE), is still puzzling. The purpose of this article is to discuss how the self-assembly of InAs QDs in MBE InAs/GaAs(001) should be properly understood in atomic scale. First, the conventional kinetic theories that have traditionally been used to interpret QD self-assembly in heteroepitaxial growth with a significant lattice mismatch are reviewed briefly by examining the literature of the past two decades. Second, based on their own experimental data, the authors point out that InAs QD self-assembly can proceed in distinctly different kinetic ways depending on the growth conditions and so cannot be framed within a universal kinetic theory, and, furthermore, that the process may be transient, or the time required for a QD to grow to maturity may be significantly short, which is obviously inconsistent with conventional kinetic theories. Third, the authors point out that, in all of these conventional theories, two well-established experimental observations have been overlooked: i) A large number of “floating” indium atoms are present on the growing surface in MBE InAs/GaAs(001); ii) an elastically strained InAs film on the GaAs(001) substrate should be mechanically unstable. These two well-established experimental facts may be highly relevant and should be taken into account in interpreting InAs QD formation. Finally, the authors speculate that the formation of an InAs QD is more likely to be a collective event involving a large number of both indium and arsenic atoms simultaneously or, alternatively, a morphological/structural transformation in which a single atomic InAs sheet is transformed into a three-dimensional InAs island, accompanied by the rehybridization from the sp 2-bonded to sp 3-bonded atomic configuration of both indium and arsenic elements in the heteroepitaxial growth system.

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Section: Formation Of Inas Qds Is Difficult To Understandmentioning

confidence: 99%

Self-assembly of InAs quantum dots on GaAs(001) by molecular beam epitaxy

Jin

2015

Front. Phys.

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“…In particular, the authors studied the initial-boundary value problem. Numerical techniques like finite difference, finite element and kinetic Monte Carlo method were used to provide approximate solutions to the equation describing crystal surface growth [25][26][27][28]. The pyramidal structure characterized by the absence of preferred slope in onedimension was examined in [29], applying a similarity approach.…”

Section: Introductionmentioning

confidence: 99%

On the Classical Solutions for the Kuramoto-Sivashinsky Equation with Ehrilch-Schwoebel Effects

Coclite

Ruvo²

2022

Contemporary Mathematics

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The Kuramoto-Sivashinsky equation with Ehrilch-Schwoebel effects models the evolution of surface morphology during Molecular Beam Epitaxy growth, provoked by an interplay between deposition of atoms onto the surface and the relaxation of the surface profile through surface diffusion. It consists of a nonlinear fourth order partial differential equation. Using energy methods we prove the well-posedness (i.e., existence, uniqueness and stability with respect to the initial data) of the classical solutions for the Cauchy problem, associated with this equation.

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“…Global solutions were constructed to the parabolic evolution equation by Fujimura and Yagi [23]. Numerical techniques like finite difference, finite element and kinetic Monte Carlo method were used to provide approximate solutions to the equation describing crystal surface growth [24][25][26][27]. The pyramidal structure characterized by the absence of preferred slope in one-dimension was examined by Guedda and Trojette [28] applying a similarity approach.…”

Section: Introductionmentioning

confidence: 99%