Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications

Effect of UV-ozone oxidation on the device characteristics of InP-based heterostructure bipolar transistors

“…16,17 Our results show that a tradeoff between gain and breakdown must be made in UVozone treatment, since a treatment brief enough to avoid degrading the breakdown voltage is too short to optimize the current gain. The contrast between the changes of gain and breakdown might be due to different oxidation mechanisms between the planar intrinsic base and the vertical basecollector sidewalls.…”

Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP

“…At temperatures below 500°C, oxidation of high indium content AlInAsSb was not expected, since for ternary AlInAs, temperatures higher than 500°C are necessary for lateral oxidation. 15 However, at high temperature, the AlInAsSb layers may have experienced self-stopping oxidation so quickly as to prevent a measurable amount of oxidation. In other words, the antimony may have incorporated into the oxide at the beginning of the oxidation process, effectively blocking further oxidation.…”

Selective wet oxidation of AlAsSb alloys on GaAs

“…Investigations 2 of the oxidation of other Al-containing III-V semiconductors have also been carried out to gain additional chemico-physical insight and to potentially expand the use of this process to make transistors or photonics devices operating in other spectral bands than the near-infrared window (800-1000 nm). So far, the studied alloys include AlIn(Ga)P 28 on GaAs, AlInAs [29][30][31][32] and AlAsSb [33][34][35] on InP, AlInN on GaN 36,37 , and AlAsSb on GaSb [38][39][40][41][42] .…”