Controlled stripes of ultrafine ferroelectric domains

Feigl, Ludwig; Yudin, P. V.; Stolichnov, Igor; Sluka, Tomáš; Shapovalov, Konstantin; Mtebwa, Mahamudu; Sandu, Cosmin S.; Wei, Xian‐Kui; Tagantsev, A. K.; Setter, N.

doi:10.1038/ncomms5677

Cited by 87 publications

(91 citation statements)

References 38 publications

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“…The dislocation-assisted strain relaxation probably hinders the formation of denser a domain patterns when buffer layers of PZT with Zr content above 30% are used. 22 This is also supported by the curved irregular structures that are non-ferroelastic 180…”

Section: A Domain Periodicitymentioning

confidence: 51%

Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O3 thin films: Impact on domain compliance and piezoelectric properties

et al. 2016

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While there is extensive literature on the influence of both compressive and tensile strain on the domain patterns of (001) tetragonal ferroelectric thin films, little is known regarding domain engineering in (110) films. The primary reason is the absence of suitable substrates that allow the growth of epitaxial films with this orientation. However, recent works emphasized the importance of this orientation with the possibility for e.g. to achieve ultra-high ferroelectric domain density. This work reports the controlled growth of a/c domain patterns in highly tetragonal monocrystalline (110) oriented Pb(Zr0.05, Ti0.95)O3. It is demonstrated that while a/c patterns can easily be realized in the single layer film relaxed under compressive misfit strain, modulation of tensile misfit strain through the use of buffer layers allows for consistent control of domain periodicity, in which case the average domain period was tuned between 630 and 60 nm. The effects of domain density and defects on both switching behavior and piezoelectric properties in single and multilayered structures are also investigated, revealing an optimum composition of the buffer layer for improved domain compliance and piezoelectric properties.

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Section: A Domain Periodicitymentioning

confidence: 51%

Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O3 thin films: Impact on domain compliance and piezoelectric properties

et al. 2016

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“…The piezoresponse force microscopy (PFM) scan in Figure 1c, however, reveals the presence of in-plane oriented a-domains as [110] DSO -polarized stripes along [001] DSO . Such stripes are known to be caused by the orthorhombic nature of the substrate, [20,21] but because of …”

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confidence: 98%

“…The 90° domain walls resulting from a-domains originating at surface dislocations are pinned and their immobility obstructs the controlled migration of 180° domain walls. [19] Even if a-domains are wanted, the controlled formation of these domains and of their associated 90° a/c domain walls in thin films requires post growth annealing [20] or substrate termination control. [21] Hence, for devices based on domain-wall motion in tetragonal ferroelectrics, understanding and controlling the distribution and morphologies of a-and c-domains is essential.…”

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confidence: 99%

Domain Wall Architecture in Tetragonal Ferroelectric Thin Films

et al. 2016

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Non-Ising-like 180° ferroelectric domain wall architecture and domain distribution in tetragonal PbZr Ti O thin films are probed using a combination of optical second harmonic generation and scanning transmission electron microscopy. In the remnant state, a specific nonlinear optical signature of tilted 180° domain walls corresponding to a mixed Ising-Néel-type rotation of polarization across the wall is shown.

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“…11,[14][15][16] Due to the inherent highly defective crystal structure of the obtained films, another approach is needed in order to create flexible domain patterns or even to study the intrinsic properties of a-domains. It is known that DSO substrates lead to an a/c domain pattern at room temperature by directly exerting a tensile strain on Pb(Zr,Ti)O 3 thin films with a low Zr content, [17][18][19] although the mobility of this pattern has not yet been studied.…”

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confidence: 99%

Compliant ferroelastic domains in epitaxial Pb(Zr,Ti)O3 thin films

Feigl

McGilly

Sandu

et al. 2014

Applied Physics Letters

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Ordered patterns of highly compliant ferroelastic domains have been created by use of tensile strained epitaxial Pb(Zr,Ti)O3 thin films, of very low defect density, grown on DyScO3 substrates. The effect of 180° switching on well-ordered a/c 90° domain patterns is investigated by a combination of transmission electron microscopy, piezoelectric force microscopy, and X-ray diffraction. It is shown that ferroelastic a-domains, having an in-plane polarization, can be created and completely removed on a local level by an out-of-plane electric field. The modifications of the ferroelastic domain pattern can be controlled by varying the parameters used during switching with a piezoresponse force microscope to produce the desired arrangement.

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Controlled stripes of ultrafine ferroelectric domains

Cited by 87 publications

References 38 publications

Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O3 thin films: Impact on domain compliance and piezoelectric properties

Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O3 thin films: Impact on domain compliance and piezoelectric properties

Domain Wall Architecture in Tetragonal Ferroelectric Thin Films

Compliant ferroelastic domains in epitaxial Pb(Zr,Ti)O3 thin films

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