Controlled sublimation growth of single crystalline 4H-SiC and 6H-SiC and identification of polytypes by x-ray diffraction

Kanaya, Masatoshi; Takahashi, Jun; Fujiwara, Yuichiro; Moritani, Akihiro

doi:10.1063/1.104443

Cited by 94 publications

(37 citation statements)

References 5 publications

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“…(a) supersaturation for 4H-SiC growth is higher than for 6H-SiC [16]; (b) 4H-SiC requires growth temperatures lower than that for 6H-SiC growth [13,16,17] but practically in the same range as for 15R-SiC growth [28,29]. The critical temperature (temperature above which growth of 6H SiC is preferable) increases with higher axial temperature gradient [25].…”

Section: Resultsmentioning

confidence: 94%

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Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth

Tupitsyn

Arulchakkaravarthi

Drachev

et al. 2007

Journal of Crystal Growth

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Section: Resultsmentioning

confidence: 94%

“…The main growth parameters, such as seed polarity [13][14][15], growth temperature [13,16,17], supersaturation [16,17], vapor phase stoichiometry [17,18], impurity levels [19], seed off-cut angle [20,21], and influence of the facet [6] have been studied in regard to polytype control.…”

Section: Introductionmentioning

confidence: 99%

Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth

Tupitsyn

Arulchakkaravarthi

Drachev

et al. 2007

Journal of Crystal Growth

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“…It has been reported in Ref. [4] that the growth interface temperature has a great effect on the polytype switching. 6H-SiC is favoured to grow at relatively high growth interface temperature while 4H-is more stable at relatively low growth interface temperature.…”

Section: Resultsmentioning

confidence: 99%

“…However, the PVT growth of SiC crystals is a complex process in which there are many factors affecting the quality of final SiC crystals, such as growth temperatures [4][5][6][7], temperature gradients [7][8][9][10], the distance between source and seed [5,6], growth pressures [4][5][6][7], seed polarities [11,12] and seed orientations [13][14][15][16]. Moreover, some growth parameters including growth interface temperatures and the distance between source and seed keep varying throughout the whole growth process, leading to various defects in grown SiC crystals.…”

Section: Introductionmentioning

confidence: 98%

Factors affecting the formation of misoriented domains in 6H‐SiC single crystals grown by PVT method

Peng¹,

Yang²,

Jian³

et al. 2009

Cryst. Res. Technol.

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Misoriented domains (MDs) are common defects in 6H-SiC single crystals. We performed an experimental study on the formation of MDs in 2-inch 6H-SiC single crystals. Micro-Raman spectroscopy revealed that the polytype of MDs was mainly 4H-SiC. By changing growth conditions, it was found that the MDs' formation was closely related to growth rate and the position of highest temperature relative to growth interface. When the growth rate of ingots was relatively high the MDs were more likely to form. Furthermore, the nearer growth interface the position of highest temperature was, the larger the size of the MDs. Based on our experimental findings we suggested that the MDs' formation and the polytype switching from 6H-to 4H-SiC were due to too large axial and/or radial temperature gradients.The results would be helpful to improve the quality of SiC single crystals grown by PVT technique.

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“…8 However, a reliable explanation of the polytype stability has not been reported. 10 The control of the polytype is a complex problem, and controlling the polytype stability is still a major issue in SiC crystal growth research.…”

Section: Introductionmentioning

confidence: 99%

Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

et al. 2014

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Polytype stability is very important for high quality SiC single crystal growth. However, the growth conditions for the 4H, 6H and 15R polytypes are similar, and the mechanism of polytype stability is not clear. The kinetics aspects, such as surface-step nucleation, are important. The kinetic Monte Carlo method is a common tool to study surface kinetics in crystal growth. However, the present lattice models for kinetic Monte Carlo simulations cannot solve the problem of the competitive growth of two or more lattice structures. In this study, a competitive lattice model was developed for kinetic Monte Carlo simulation of the competition growth of the 4H and 6H polytypes of SiC. The site positions are fixed at the perfect crystal lattice positions without any adjustment of the site positions. Surface steps on seeds and large ratios of diffusion/deposition have positive effects on the 4H polytype stability. The 3D polytype distribution in a physical vapor transport method grown SiC ingot showed that the facet preserved the 4H polytype even if the 6H polytype dominated the growth surface. The theoretical and experimental results of polytype growth in SiC suggest that retaining the step growth mode is an important factor to maintain a stable single 4H polytype during SiC growth.

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Controlled sublimation growth of single crystalline 4H-SiC and 6H-SiC and identification of polytypes by x-ray diffraction

Cited by 94 publications

References 5 publications

Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth

Controllable 6H-SiC to 4H-SiC polytype transformation during PVT growth

Factors affecting the formation of misoriented domains in 6H‐SiC single crystals grown by PVT method

Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

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