Controlled vapour growth and phase engineering of large-area bilayer WSe2 for optoelectronic applications

Self-Rolled-Up WSe2 One-Dimensional/Two-Dimensional Homojunctions: Enabling High-Performance Self-Powered Polarization-Sensitive Photodetectors

“…50 When a bias voltage of −1 V was applied, D* increased to 5.30 × 10 10 Jones (Figure S8), representing a notable advantage compared to CVD-synthesized WSe 2 with a 2D morphology. 51 Additionally, we performed a stability test for the device by switching the 660 nm light source on and off while maintaining bias voltages of 0 and −1 V, respectively. Figure 3i illustrates that the photodetector demonstrates commendable self-powered photodetection stability during the detection period (180 s).…”

“…Under 660 nm illumination at a power density of 23.4 mW/cm 2 , the detectivity ( D* ) values of the 1D/2D WSe 2 homojunction device were calculated to be 3.24 × 10 9 Jones at zero bias voltage (Figure h) . When a bias voltage of −1 V was applied, D* increased to 5.30 × 10 10 Jones (Figure S8), representing a notable advantage compared to CVD-synthesized WSe 2 with a 2D morphology . Additionally, we performed a stability test for the device by switching the 660 nm light source on and off while maintaining bias voltages of 0 and −1 V, respectively.…”