Controlling dark current in type-II superlattice photodiodes

Canedy, C. L.; Aifer, E. H.; Warner, Jeffrey H.; Vurgaftman, I.; Jackson, Eric M.; Tischler, Joseph G.; Powell, Samuel; Olver, K.; Meyer, J. R.; Tennant, W. E.

doi:10.1016/j.infrared.2009.09.004

Cited by 40 publications

(21 citation statements)

References 15 publications

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“…Another style of barrier is formed by grading the bandgap upward from the narrow gap in the absorber. 10 Most barrier designs require a nonzero bias voltage to extract the photocurrent. We still refer to these devices as photovoltaic, despite the substantial bias, because the minority carriers representing the signal must cross a p-n junction to reach the contact.…”

Section: Type II Superlattice Materialsmentioning

confidence: 99%

Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe

Rhiger

2011

Journal of Elec Materi

104

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The InAs/GaSb family of type II superlattices (T2SL) is the only known infrared (IR) detector material having a theoretically predicted higher performance than HgCdTe. The Auger lifetime has been predicted to be much longer, offering the possibility of much lower dark currents. In this paper the present state of the technology for long-wavelength infrared (LWIR) applications is evaluated by examining the dark current density in LWIR T2SL diodes at 78 K as a function of device cutoff wavelength, and comparing it with the HgCdTe benchmark known as Rule 07. The dark current density remains greater than Rule 07, but it has rapidly decreased in recent years with advancing technology, particularly due to innovative barrier structures.

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Section: Type II Superlattice Materialsmentioning

confidence: 99%

Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe

Rhiger

2011

Journal of Elec Materi

104

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“…The surface component and the bulk component of the resistance-area product at zero bias, R 0 A, of a photodiode can be separated by doing the variable-area diode tests, which have been widely used for HgCdTe and InAs/GaSb T2SL structures [5,15,24,25]. The resistance due to the bulk effect R bulk and the resistivity of the surface currentrelated effect r surface can be evaluated through the tests.…”

Section: Resultsmentioning

confidence: 99%

“…(13)), while the diffusion current should be one band gap (see Eq. (12)) [15]. Taking the logarithm for the two sides of Eq.…”

Section: Resultsmentioning

confidence: 99%

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Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector

Zhang

et al. 2014

Chin. Sci. Bull.

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We investigate the dark current mechanism for an unpassivated mid wavelength (MW) type II InAs/GaSb superlattice infrared photodetector by doing the variablearea diode tests. The bulk resistance-area product and the resistivity due to the surface current are determined to be 17.72 X cm 2 and 704.23 X cm at 77 K, respectively. It is found that for all the mesa sizes used, the dark current is dominated or predominated by the surface component, and with scaling back the mesa size, the surface current increases while the bulk component decreases. The activation energy is determined to be 145 meV for the temperature range around 140-280 K, while it is 6 meV when temperature is below 100 K. It is also found that the dark current is dominated by the generation-recombination current for the MW device when temperature is between 140 and 280 K.

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“…The present classifications for the different types of SLS detectors are somewhat ambiguous in that multiple and overlapping categories exist; however, in the following discussion, attempts will be made to clarify potential conflicts. In consideration of space constraints, other less common type II SLS detectors are not covered here in detail, which include, but are not limited to, the shallow etch mesa isolation (SEMI), a type of n-on-p graded-gap "W" photodiode structure [8]; hybrid superlattice (HSL) structure [81]; and strain-compensated InAs/AlInSb superlattice barrier (ALSL-B) [82].…”

Section: Overviewmentioning

confidence: 99%

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

Sood¹,

Zeller²,

Welser³

et al. 2018

Two-Dimensional Materials for Photodetector

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The implementation of strained layer superlattices (SLS) for detection of infrared (IR) radiation has enabled compact, high performance IR detectors and two-dimensional focal plane arrays (FPAs). Since initially proposed three decades ago, SLS detectors exploiting type II band structures existing in the InAs/GaSb material system have become integral components in high resolution thermal detection and imaging systems. The extensive technological progress occurring in this area is attributed in part to the band structure flexibility offered by the nearly lattice-matched InAs/AlSb/Ga(In)Sb material system, enabling the operating IR wavelength range to be tailored through adjustment of the constituent strained layer compositions and/or thicknesses. This has led to the development of many advanced type II SLS device concepts and architectures for low-noise detectors and FPAs operating from the short-wavelength infrared (SWIR) to very long-wavelength infrared (VLWIR) bands. These include double heterostructures and unipolar-barrier structures such as graded-gap M-, W-, and N-structures, nBn, pMp, and pBn detectors, and complementary barrier infrared detector (CBIRD) and pBiBn designs. These diverse type II SLS detector architectures have provided researchers with expanded capabilities to optimize detector and FPA performance to further benefit a broad range of electrooptical/IR applications.

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Controlling dark current in type-II superlattice photodiodes

Cited by 40 publications

References 15 publications

Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe

Performance Comparison of Long-Wavelength Infrared Type II Superlattice Devices with HgCdTe

Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector

Design and Development of Two-Dimensional Strained Layer Superlattice (SLS) Detector Arrays for IR Applications

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