Molecular-scale electronics is a branch of nanotechnology, which utilizes molecules as electronic components. Here, we demonstrate that roomtemperature quantum interference (QI) effects identified in single molecules can be translated into ultra-thin-film materials. This breakthrough opens up avenues for exploiting QI in the design of new materials with enhanced electrical, thermal, and sensing functionality. Field effect control using an ionic liquid gate demonstrates that QI can be used to optimize the on-off ratio of ultra-thin-film transistors. (X.D.)
HIGHLIGHTS A vertical tunneling organic transistor on grapheneRoom-temperature intramolecular quantum interference in self-assembled monolayers Field effect tuning of the energy levels of a self-assembled monolayer on graphene Quantum interference optimizes the on-off ratio of ultra-thin-film transistors Famili et al., Chem 5,[474][475][476][477][478][479][480][481][482][483][484] February 14,
SUMMARYIf single-molecule, room-temperature, quantum interference (QI) effects could be translated into massively parallel arrays of molecules located between planar electrodes, QI-controlled molecular transistors would become available as building blocks for future electronic devices. Here, we demonstrate unequivocal signatures of room-temperature QI in vertical tunneling transistors, formed from self-assembled monolayers (SAMs), with stable room-temperature switching operations. As a result of constructive QI effects, the conductances of the junctions formed from anthanthrene-based molecules with two different connectivities differ by a factor of 34, which can further increase to 173 by controlling the molecule-electrode interface with different terminal groups. Field-effect control is achieved using an ionic liquid gate, whose strong vertical electric field penetrates through the graphene layer and tunes the energy levels of the SAMs. The resulting room-temperature on-off current ratio of the lowestconductance SAMs can reach up to 306, about one order of magnitude higher than that of the highest-conductance SAMs.