Controlling Lateral Ordering of InGaAs Quantum Dots with Arsenic Background

Abstract

We present in this work a method to control two-dimensional (2D) lateral ordering of In 0.4 Ga 0.6 As quantum dots (QDs) using the GaAs surface morphology and growth conditions. We have shown experimentally that the 2D ordering is due to the GaAs surface morphology. By setting the correct growth conditions, such as substrate temperature and Arsenic background, the 2D lateral ordering can be improved by the stacking of In 0.4 Ga 0.6 As QDs layers. Our results are consistent with reported in experimental and theoretical studies on surface structure and diffusion mechanism over GaAs surface.Mater. Res. Soc. Symp. Proc. Vol. 959

Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots

“…Details of growth mechanisms and the processes involved in diffusion controlling by the background Arsenic environment are described in Ref. [ 19 ].…”

“…This work has been motivated by the plausibility of controlled self-assembling growth of 1D dot arrays (QD chains) [19] and their potential use for testing important quantum effects such as correlation of information and optical coupling between dots where the relevant aspects of effects associated with inter-dot coupling and QD shape, size and distribution deserve special attention. It is also discussed the interplay between shape and strain fields with the inter-dot correlation that is revealed in the GID measurements and PL-emission spectra from QD arrays.…”

“…In the present work, we addressed mechanisms of testing simultaneously one-dimensional (1D) lateral ordering of dots, inter-dot coupling and 2D anisotropy of self-assembled QDs from studies of grazing-incidence X-ray diffraction (GID) and polarized photoluminescence (PL) emissions under different excitation power. This work has been motivated by the plausibility of controlled self-assembling growth of 1D dot arrays (QD chains) [ 19 ] and their potential use for testing important quantum effects such as correlation of information and optical coupling between dots where the relevant aspects of effects associated with inter-dot coupling and QD shape, size and distribution deserve special attention. It is also discussed the interplay between shape and strain fields with the inter-dot correlation that is revealed in the GID measurements and PL-emission spectra from QD arrays.…”