Controlling magnetism with multiferroics

Chu, Ying‐Hao; Martin, Lane W.; Holcomb, Mikel B.; Ramesh, R.

doi:10.1016/s1369-7021(07)70241-9

Cited by 268 publications

(163 citation statements)

References 57 publications

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“…For this reason, the development of these classes of materials is intimately related. ME/MFs allow the possibility of switching the magnetization with electric field [25]. This offers a wealth of opportunity for information storage applications.…”

Section: Introductionmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

208

144

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The existence of multiple ferroic orders in the same material and the coupling between them have been known for decades. However, these phenomena have mostly remained the theoretical domain owing to the fact that in single-phase materials such couplings are rare and weak. This situation has changed dramatically recently for at least two reasons: first, advances in materials fabrication have made it possible to manufacture these materials in structures of lower dimensionality, such as thin films or wires, or in compound structures such as laminates and epitaxial-layered heterostructures. In these designed materials, new degrees of freedom are accessible in which the coupling between ferroic orders can be greatly enhanced. Second, the miniaturization trend in conventional electronics is approaching the limits beyond which the reduction of the electronic element is becoming more and more difficult. One way to continue the current trends in computer power and storage increase, without further size reduction, is to use multi-functional materials that would enable new device capabilities. Here, we review the field of multi-ferroic (MF) and magnetoelectric (ME) materials, putting the emphasis on electronic effects at ME interfaces and MF tunnel junctions.

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Section: Introductionmentioning

confidence: 99%

Multi-ferroic and magnetoelectric materials and interfaces

Velev

Jaswal

Tsymbal

2011

Phil. Trans. R. Soc. A.

208

144

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“…The magnetoelectric coupling between the electric and magnetic degrees of freedom where an electric (magnetic) polarization can be induced by a magnetic (electric) field is especially exciting [14,15]. Magnetoelectric multiferroics allow the possibility of switching the magnetization with electric field, which offers an ample opportunity for information storage applications [16,17].…”

Section: Introductionmentioning

confidence: 99%

Intrinsic defects in multiferroic BiFeO3and their effect on magnetism

2012

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We investigate energetics of the intrinsic defects in bulk multiferroic BiFeO 3 and explore their implication for magnetization using a first-principles approach based on density functional theory. We find that dominant defects in oxidizing (oxygen-rich) conditions are Bi and Fe vacancies and in reducing (oxygen-poor) conditions are O and Bi vacancies. The calculated carrier concentration shows that the BiFeO 3 grown in oxidizing conditions has p-type conductivity. The conductivity decreases with oxygen partial pressure and the material becomes insulating with tendency for n-type conductivity. We find that the Bi and Fe vacancies produce a magnetic moment of about 1μ B and 5μ B per vacancy, respectively, for p-type BiFeO 3 and none for insulating BiFeO 3 . O vacancies do not introduce any moment for both p-type and insulating BiFeO 3 . Calculated magnetic moments due to intrinsic defects are consistent with those reported experimentally for the bulk BiFeO 3 .2

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“…Due to the coupling between polarization and magnetization, BFO is very interesting for memory devices with multiple states or in which the information can be magnetically written and electrically read or vice versa. [1][2][3][4][5] Due to this large application potential a significant effort has been paid in the past years to grow high quality films on various substrates and to investigate their electrical properties, especially polarization and leakage current in BFO capacitors. Among the preparation techniques, pulsed laser deposition ͑PLD͒ proved to be one of the most suitable methods to obtain thin films of epitaxial quality on single-crystal substrates such as DyScO 3 ͑DyScO͒ and SrTiO 3 ͑STO͒ showing large polarization values up to 100 C / cm 2 for the BFO films with ͑111͒ orientation.…”

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confidence: 99%

Orientation-dependent potential barriers in case of epitaxial Pt–BiFeO3–SrRuO3 capacitors

Pintilie

Drǎgoi

Chu

et al. 2009

Applied Physics Letters

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The leakage current in epitaxial BiFeO 3 capacitors with bottom SrRuO 3 and top Pt electrodes, grown by pulsed laser deposition on SrTiO 3 ͑100͒, SrTiO 3 ͑110͒, and SrTiO 3 ͑111͒ substrates, is investigated by current-voltage ͑I-V͒ measurements in the 100-300 K temperature range. It is found that the leakage current is interface-limited and strongly dependent on the orientation of the substrate. The potential barriers at the electrode interfaces are estimated to about 0.6, 0.77, and 0.93 eV for the ͑100͒, ͑110͒, and ͑111͒ orientations, respectively.

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Controlling magnetism with multiferroics

Cited by 268 publications

References 57 publications

Multi-ferroic and magnetoelectric materials and interfaces

Multi-ferroic and magnetoelectric materials and interfaces

Intrinsic defects in multiferroic BiFeO3and their effect on magnetism

Orientation-dependent potential barriers in case of epitaxial Pt–BiFeO3–SrRuO3 capacitors

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