Controlling Nucleation and Crystal Growth of Ge in a Liquid Metal Solvent

DeMuth, Joshua; Fahrenkrug, Eli; Maldonado, Stephen

doi:10.1021/acs.cgd.6b01360

Cited by 21 publications

(34 citation statements)

References 59 publications

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“…Ge crystals grown with pure Hg exhibited clear dendritic structures, consistent with fast nucleation and crystal growth occurring at a large supersaturation. That is, because the solubility of Ge in Hg is small at room temperature, any appreciable amount of Ge dissolved in the liquid metal likely resulted in a large supersaturation, as observed in related ec-LLS processes. , Since the rates of nucleation and crystal growth are typically proportional to the extent of supersaturation, − the subsequent crystal growth rates are expected to be correspondingly fast.…”

Section: Discussionmentioning

confidence: 99%

Evidence for Facilitated Surface Transport during Ge Crystal Growth by Indium in Liquid Hg–In Alloys at Room Temperature

Pattadar

Cheek

Sartori

et al. 2021

Crystal Growth & Design

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Room-temperature electrodeposition of Ge crystallites was investigated by the electrochemical liquid–liquid–solid (ec-LLS) process using a family of Hg1–x In x alloys. The objective was to determine whether different liquid metal alloys with nominally the same bulk solubility toward Ge but potentially different surface character would yield any differences in the resultant Ge crystallites. Variation of the In fraction in these alloys was the control variable. The following details were ascertained from the cumulative data. First, in accordance with thermodynamic predictions, the surface of Hg x In1–x alloys was strongly enriched with Hg according to X-ray specular reflectivity data. These data further indicated that the surface enrichment was confined exclusively to a single atomic layer at the liquid metal surface. These properties of the Hg1–x In x /electrolyte interface structure facilitated the first two steps of the ec-LLS process. Second, the presence of In influenced the morphology of the resultant Ge crystallites from ec-LLS, in accordance with mediated transport of the Ge upon initial electroreduction. Specifically, X-ray diffraction, Raman, and microscopy data suggest that a strong affinity between In and Ge that affects the crystal morphology. This study thus motivates further exploration of both In as a component in liquid metal solvents to facilitate grain size and more general studies detailing how the surface structure and composition of liquid metals influence crystal growth. These findings significantly advance the prospect for preparing technologically relevant inorganic crystalline semiconductors at low temperatures.

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Section: Discussionmentioning

confidence: 99%

Evidence for Facilitated Surface Transport during Ge Crystal Growth by Indium in Liquid Hg–In Alloys at Room Temperature

Pattadar

Cheek

Sartori

et al. 2021

Crystal Growth & Design

Self Cite

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“…The electrochemical liquid-liquid-solid (ec-LLS) crystal growth represents one of this kind. 131 This approach is able to produce nanostructured semiconductor crystals of germanium (Ge) and gallium arsenide (GaAs) with a range of LM catalysts including mercury, 132 Ga, 133 Ga-In alloys, 134,135 and Bi-In alloys. 136 Particularly, ec-LLS using micro-and nano-LM droplets leads to wire-shape crystal growth.…”

Section: Electrocatalysismentioning

confidence: 99%

“…Ga-In Ga-Sn Ga-Zn liquid phase electro catalysis Mayyas et al 126 Ghasemian et al 129 Semiconductor production Hg Ga Ga-In Bi-In liquid phase electro catalysis Carim et al 132 Gu et al 133 Fahrenkrug et al 134 DeMuth et al 135,136 2D metal oxide sheets production Ga-In Ga-In-Sn Bi-Sn liquid phase liquid exfoliation Zavabeti et al 10 Yuan et al 127 Water splitting Al-Ga Al-Galinstan amalgams other Yu et al 142 Tekade et al 143 He et al 144 Xu et al…”

Section: Nanostructured Catalyst Productionmentioning

confidence: 99%

Liquid Metals in Catalysis for Energy Applications

Zuraiqi

Zavabeti

Allioux

et al. 2020

Joule

149

103

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“…The optimum growth rate was consistent with previous PP-ALD studies in which similar concentrations and pulse times were employed, 0.02 nm/cycle. The use of the potential pulse cycle for film growth resulted in surfacelimited control over the deposit stoichiometry each cycle and thus a layer-by-layer growth process [39].…”

Section: Experimental Validationsmentioning

confidence: 99%

Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review

2018

AMSE

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Having mastered the technology of epitaxial deposition of crystalline thin films (i.e. homo and heteroepitaxy) on crystalline substrates has already been found providing better device designs with numerous advantages in the development of microelectronics devices and circuits. Consequently, mass-scale production of epitaxial thin films could successfully be developed and used in fabricating discrete devices and integrated circuits (ICs) using silicon/compound semiconductors commercially. Especially, realizing the hetero-epitaxial interfaces possessing two-dimensional electron/hole gas (2DEG/2DHG) sheets could offer very-high electron/hole mobilities for producing high-electronmobility transistors (HEMTs) and amplifiers for microwave/millimeter-wave communication systems. However, the major limitation of this technology was its requirement of extremely high cost infrastructures. Subsequently, the rising demands of the technologies to produce large-size displays/electronics systems, and large-numbers of sensors/ actuators in Internet of Thing (IoT) made it imminent for the researchers to explore replacing the existing cost intensive technologies by more affordable ones. In such an endeavor, developing a simpler and alternate epitaxial technology became imminent to look for. Incidentally, electrodeposition based epitaxy attracted the attention of the researchers by employing potentiostatic set-up for understanding the growth kinetics of the ionic species involved. While going through these studies, starting with the deposition of metallic/semiconducting thin films, atomic-layer epitaxial depositions could be successfully made and named as electrochemical atomic layer deposition (EC-ALD). Despite numerous attempts made for almost two decades in this fascinating field the related technology is not yet ready for its commercial exploitations. Some of the salient features of this process (i.e. commonly known as EC-ALD or EC-ALE) are examined here with recent results along with future prospects. Indexing Terms: Vapor Phase Epitaxy (VPE), Liquid Phase Epitaxy (LPE), Atomic Layer Deposition, Atomic Layer Epitaxy (ALE), and Molecular Beam Epitaxy (MBE); Electrochemical Atomic Layer Deposition (EC-ALD)

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Controlling Nucleation and Crystal Growth of Ge in a Liquid Metal Solvent

Cited by 21 publications

References 59 publications

Evidence for Facilitated Surface Transport during Ge Crystal Growth by Indium in Liquid Hg–In Alloys at Room Temperature

Evidence for Facilitated Surface Transport during Ge Crystal Growth by Indium in Liquid Hg–In Alloys at Room Temperature

Liquid Metals in Catalysis for Energy Applications

Electrochemical Atomic Layer Deposition (EC-ALD) Low Cost Synthesis of Engineered Materials a Short Review

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