Controlling Structural and Electrical Properties of Pt Nanopowder-Dispersed SiO₂Film

Abstract

Pt nanopowder-dispersed SiO 2 (SOP) films were prepared by RF co-sputtering method using Pt and SiO 2 targets in Ar atmosphere. The growth rate and Pt content in the film were controlled by means of manipulating the RF power of Pt target while that of SiO 2 was fixed. The roughness of the film was increased with increasing the power of Pt target, which was mainly due to the increment of the size and planar density of Pt nanopowder. It was revealed that SOP film formed at 10, 15, 20 W of Pt power contained 2.3, 2.7, and 3.0 nm of spherical Pt nanopowder, respectively. Electrical conductivity of SOP films was exponentially increased with increasing Pt power as one can expect. Interestingly, conductivity of SOP films from Hall effect measurement was greater than that from DC I-V measurement, which was explained by the significant increase of electron density. 메모리 [6,7,10,[15][16][17], 저항변화 메모리(ReRAM; resistance random access memory) [4,8,9,13,14,18