Controlling Surface Carrier Density via a PEDOT:PSS Gate: An Application to the Study of Silicon‐Dielectric Interface Recombination

Bonilla, Ruy S.

doi:10.1002/solr.201800172

Cited by 12 publications

(3 citation statements)

References 57 publications

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“…Effective lifetime was acquired as a function of the surface potential applied to the gate electrode on the front and rear dielectrics, using a Sinton WCT-120 instrument. This methodology is described in detail in [45].…”

Section: Modelling Silicon Lifetime Datamentioning

confidence: 99%

Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

Bonilla

Al‐Dhahir

et al. 2020

Solar Energy Materials and Solar Cells

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The Si-SiO2 interface has and will continue to play a major role in the development of silicon photovoltaic devices. This work presents a detailed examination of how charge at or near this interface influences device performance. New understanding is identified on the effect of charge-induced potential fluctuations at the silicon surface. Such fluctuations have been considered in Si-SiO2 recombination models previously, where a universal value of electrical potential deviation was used to represent the effect. However, the approach disregards that the variation occurs in the charge concentration rather than the potential. We modify the models to accurately reflect fluctuations in external charge, allowing a precise representation of surface recombination velocity, with self-consistent !" , # , and $ parameters. Correctly accounting for these parameters can provide insights into the passivation mechanisms which can aid the development of future devices. Using the corrected model, we find that the effect of charge fluctuation at the Si-SiO2 interface is significant for the depletion regime to the weak inversion regime. This indicates that surface passivation dielectrics must operate with charge concentrations in excess of 2x10 12 q/cm 2 to avoid these effects. TCAD device simulations show that the efficiency of future PERC cells can improve up to 1% absolute when optimally charged dielectric coatings are applied both at the front and rear surfaces.

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Section: Modelling Silicon Lifetime Datamentioning

confidence: 99%

Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

Bonilla

Al‐Dhahir

et al. 2020

Solar Energy Materials and Solar Cells

Self Cite

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“…The recently established method in Ref. [30] was used to record effective lifetime as a function of gate bias.…”

Section: Sample Preparation and Methodologymentioning

confidence: 99%

“…An examination of the interface parameters was conducted by using a semi-transparent PEDOT:PSS gate biasing experiment [30,61]. In this experiment, the surface recombination at the interface is controlled by regulating the carrier density via field effect.…”

Section: Research-grade Fz Si With Sio 2 -Sin X Passivationmentioning

confidence: 99%

Enhancing Dielectric-Silicon Interfaces Through Surface Electric Fields During Firing

Bonilla,

Al-Dhahir,

Niu

et al. 2024

Preprint

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Determination of Temperature‐ and Carrier‐Dependent Surface Recombination in Silicon

Le,

Nie,

Ochoa

et al. 2024

Solar RRL

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Knowledge regarding the temperature dependence of the surface recombination at the interface between silicon and various dielectrics is critically important as it 1) provides fundamental information regarding the interfaces and 2) improves the modeling of solar cell performance under actual operating conditions. Herein, the temperature‐ and carrier‐dependent surface recombination at the silicon–oxide/silicon and aluminum–oxide/silicon interfaces in the temperature range of 25−90 °C using an advanced technique is investigated. This method enables to control the surface carrier population from heavy accumulation to heavy inversion via an external bias voltage, allowing for the decoupling of the bulk and surface contributions to the effective lifetime. Thus, it offers a simple and versatile manner to separate the chemical passivation from the charge‐assisted population control at the silicon/dielectric interface. A model is established to obtain the temperature dependence of the capture cross sections, a critical capability for the optimization of the dielectric layers and the investigation of the fundamental properties of the passivation under field operating conditions.

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Controlling Surface Carrier Density via a PEDOT:PSS Gate: An Application to the Study of Silicon‐Dielectric Interface Recombination

Cited by 12 publications

References 57 publications

Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

Charge fluctuations at the Si–SiO2 interface and its effect on surface recombination in solar cells

Enhancing Dielectric-Silicon Interfaces Through Surface Electric Fields During Firing

Determination of Temperature‐ and Carrier‐Dependent Surface Recombination in Silicon

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