With the advent of
the smart factory and the Internet of Things
(IoT) sensors, organic photovoltaics (OPVs) gained attention because
of their ability to provide indoor power generation as an off-grid
power supply. To satisfy these applications, OPVs must be capable
of power generation in both outdoor and indoor at the same time for
developing environmentally independent devices. For high performances
in indoor irradiation, a strategy that maximizes photon utilization
is essential. In this study, graphene quantum dots (GQDs), which have
unique emitting properties, are introduced into a ZnO layer for efficient
photon utilization of nonfullerene-based OPVs under indoor irradiation.
GQDs exhibit high absorption properties in the 350–550 nm region
and strong emission properties in the visible region due to down-conversion
from lattice vibration. Using these properties, GQDs provide directional
photon energy transfer to the bulk-heterojunction (BHJ) layer because
the optical properties overlap. Additionally, the GQD-doped ZnO layer
enhances shunt resistance (R
Sh) and forms
good interfacial contact with the BHJ layer that results in increased
carrier dissociation and transportation. Consequently, the fabricated
device based on P(Cl-Cl)(BDD = 0.2) and IT-4F introduces GQDs exhibiting
a maximum power conversion efficiency (PCE) of 14.0% with a superior
enhanced short circuit current density (J
SC) and fill factor (FF). Furthermore, the fabricated device exhibited
high PCEs of 19.6 and 17.2% under 1000 and 200 lux indoor irradiation
of light emitting diode (LED) lamps, respectively.