The Naval Research Laboratory (NRL) has developed a processing system based on an electron beam-generated plasma. Unlike conventional discharges produced by electric fields (DC, RF, microwave, etc.), ionization is driven by a high-energy (∼ few keV) electron beam, an approach that can be attractive to atomic layer processing applications. In particular, high electron densities (10 10 -10 11 cm −3 ) can be produced in electron beam generated plasmas, where the electron temperature remains between 0.3 and 1.0 eV. Accordingly, a large flux of ions can be delivered to substrate surfaces with kinetic energies in the range of 1 to 5 eV. This provides the potential for controllably etching and/or engineering both the surface morphology and chemistry with monolayer precision. This work describes the electron beam driven plasma processing system, with particular attention paid to system characteristics and the ability to control the generation and delivery of ions to the surface and their energies. Electron beam generated plasmas are produced by injecting a highenergy electron beam into a gas background, which will ionize, dissociate, and excite atoms or molecules as it traverses the gas volume. While the basic inelastic processes that lead to species production are the same as those in discharge plasmas, the use of energetic electron beams to drive production results in plasmas that have very different properties than conventional discharges. Some of these properties are attractive for plasma-based atomic layer processing applications where, whether etching, depositing, or chemically modifying materials, fine control over the flux and energy of ions is needed. In the case of atomic layer etching, perhaps the single most important need is to tightly control the kinetic energy of ions incident to the processing surface so as to avoid damage while maintaining a reasonable etch rate. [1][2][3] In this regard, a significant advantage of beam-driven plasmas is the inherently low electron temperature T e , which is typically a fraction of an eV in most gas mixtures of technological interest. Importantly, this is true regardless of the plasma density. Thus, one can produce a large fluence of reactive ion and neutral species where the kinetic energy of the ions is as low as a few eV.The interest in electron beam generated plasmas for materials processing can be traced back at least 4 decades. In the early 1970s Bunshah 4 described an electron beam vapor deposition system that utilizes an electron beam to both vaporize the metal and "activate" the background gas. It was also noted by Dugdale 5 that high-energy electron beam systems developed for welding could be employed for "soft vacuum vapor deposition" in a manner similar to that of Bunshah. In the 1980s, Collins and co-workers at Colorado State University, developed electron beam produced plasmas for plasma enhanced chemical vapor deposition of SiO 2 . 6,7 This system used a sheet-like beam of multi-keV electrons injected parallel to the growth substrate. A similar configurat...