2019
DOI: 10.1088/1361-6528/ab0847
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Controlling the number of layers in graphene using the growth pressure

Abstract: Monolayer graphene is commonly grown on Cu substrates due to the self-limiting nature of graphene synthesis by chemical vapor deposition (CVD). Consequently, the growth of multilayer graphene by CVD has proven to be relatively difficult. This study demonstrates that the number of layers in graphene synthesized on a copper substrate can be precisely set by controlling the partial pressure of hydrogen gas used in the CVD process. This study also shows that a pressure threshold exists for a distinct transition fr… Show more

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Cited by 20 publications
(13 citation statements)
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“…TEM or Raman spectroscopy and AFM allow the determination of the number of layers and lateral dimensions. An accurate and real view of sheet quality, the number of defects, and delamination achieved can be obtained from AFM, which allows the determination of lateral dimensions by analyzing the shape and height of the GR/GO flakes [15,36,[41][42][43].…”
Section: Graphene-based Materialsmentioning
confidence: 99%
“…TEM or Raman spectroscopy and AFM allow the determination of the number of layers and lateral dimensions. An accurate and real view of sheet quality, the number of defects, and delamination achieved can be obtained from AFM, which allows the determination of lateral dimensions by analyzing the shape and height of the GR/GO flakes [15,36,[41][42][43].…”
Section: Graphene-based Materialsmentioning
confidence: 99%
“…Nonetheless, the issue of depositing few layers graphene in APCVD can be improved by highly diluting carbon in hydrogen [45,47,48] or increasing the growth temperature above the melting point of the growth substrate [49,50]. While the surface diffusion of reaction limits the graphene growth to a single layer upon coverage of the copper surface, it has been shown that more layers can be grown on copper [51,52]. Cho et al managed to grow bilayer and multilayer graphene by controlling the growth pressure during the CVD process [51].…”
Section: Role Of Total Reaction Pressurementioning
confidence: 99%
“…While the surface diffusion of reaction limits the graphene growth to a single layer upon coverage of the copper surface, it has been shown that more layers can be grown on copper [51,52]. Cho et al managed to grow bilayer and multilayer graphene by controlling the growth pressure during the CVD process [51]. Studying several growth pressures showed that single layer graphene growth is dominant at low pressures.…”
Section: Role Of Total Reaction Pressurementioning
confidence: 99%
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“…In certain applications, bilayer [134,135], and even multilayer graphene may be desired [136]. Multilayer graphene has the benefit of being more durable during processing and can be manufactured in much the same way as single layer graphene, but with slight modifications to the process [137].…”
Section: Manufacturingmentioning
confidence: 99%