Controlling the red boundary of the tunneling photoeffect in nanodimensional carbon structures in a broad (UV-IR) wavelength range

Akchurin, Garif G.; Yakunin, A. N.; Aban'shin, N. P.; Gorfinkel, B. I.

doi:10.1134/s1063785013060151

Cited by 13 publications

(4 citation statements)

References 10 publications

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“…This happens despite the low photon energy, which is noticeably less than the work function φ0. The results provided in the recent works [5,12,13,25,26] demonstrate the experimental observation of the tunnel photoemission. It is obvious that efficiency of the analyzed structure of the photosensor will improve if an additional adjustment element is introduced that ensures implementation of the matching principle to the localization zones of the absorbed optical and electrostatic fields.…”

Section: A Model For the Tunnel Photocurrent Within The Structuresupporting

confidence: 61%

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A Visible and Near-IR Tunnel Photosensor with a Nanoscale Metal Emitter: The Effect of Matching of Hot Electrons Localization Zones and a Strong Electrostatic Field

et al. 2019

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The results of the research and design of a novel vacuum photosensor with a planar molybdenum blade structure are presented. The advanced prototype implements the principle of an increasing penetrability of the Schottky barrier for the metal–vacuum interfaces under the action of an external strong electrostatic field. Theoretical and experimental substantiation of the photosensor performance in a wide range of wavelengths (from 430 to 680 nm and from 800 to 1064 nm) beyond the threshold of the classical photoelectric effect is given. The finite element method was applied to calculate distribution of the optical and electrostatic fields inside the photosensor structure. The sensor current-to-light response was studied using the periodic pulsed irradiation with the tunable wavelength. It was shown that the nanoscale localization zones of two types are formed near the surface of the blade tip: the zone of an increased concentration of hot electrons localized inside the molybdenum blade, and the zone with an increased strength of the external electrostatic field localized outside the blade. In general, the mutual positions of these zones may not coincide, whereas the position of the first-type localization zone significantly varies with the changes in the wavelength of the irradiating light. This causes features in the spectrum of the quantum yield of the photosensor such as expressed non-monotonic behavior and occurrence of sharp dips. The design of the photosensor that provides matching of the positions for both types of localization zones was proposed; the manufactured prototypes of the designed device were experimentally studied. In the designed photosensor, the ballistic transport of photoelectrons in the vacuum gap with a strong field provides a possibility for the creation of ultra-fast optoelectronic devices, such as modulators, detectors, and generators.

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Section: A Model For the Tunnel Photocurrent Within The Structuresupporting

confidence: 61%

“…This happens despite the low photon energy, which is noticeably less than the work function ϕ 0 . The results provided in the recent works [5,12,13,25,26] demonstrate the experimental observation of the tunnel photoemission.…”

Section: A Model For the Tunnel Photocurrent Within The Structuresupporting

confidence: 61%

A Visible and Near-IR Tunnel Photosensor with a Nanoscale Metal Emitter: The Effect of Matching of Hot Electrons Localization Zones and a Strong Electrostatic Field

et al. 2019

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“…This differs them from most of the works [ 20 , 21 , 22 ] devoted to the problems of solar energy conversion or catalysis. The motivation for the work was previous encouraging results [ 25 , 26 ], as well as our experimental data [ 14 , 15 , 16 , 17 , 18 , 27 , 28 ] on tunneling emission of hot electrons from metal (Mo) and composite structures such as a “metal–DLC (α-C) film” in a vacuum under conditions of combined exposure to a strong electrostatic field and laser radiation. It was found that irradiation of interdigital structures such as the “metal–DLC film” of a vacuum microcathode with CW laser radiation of milliwatt power at discrete wavelengths from 405 to 1550 nm produced a tunnel photocurrent [ 27 ], which linearly depended on the light intensity.…”

Section: Features Of the Processes Of Tunnel Photoemission Into Vamentioning

confidence: 99%

Modeling of Laser-Induced Plasmon Effects in GNS-DLC-Based Material for Application in X-ray Source Array Sensors

Yakunin

Zarkov

Avetisyan

et al. 2021

Sensors

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An important direction in the development of X-ray computed tomography sensors in systems with increased scanning speed and spatial resolution is the creation of an array of miniature current sources. In this paper, we describe a new material based on gold nanostars (GNS) embedded in nanoscale diamond-like carbon (DLC) films (thickness of 20 nm) for constructing a pixel current source with photoinduced electron emission. The effect of localized surface plasmon resonance in GNS on optical properties in the wavelength range from UV to near IR, peculiarities of localization of field and thermal sources, generation of high-energy hot electrons, and mechanisms of their transportation in vacuum are investigated. The advantages of the proposed material and the prospects for using X-ray computed tomography in the matrix source are evaluated.

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“…1 a [5,6], prompted the authors to submitting a new task. It was decided to use the structure with field localization to reduce the red tunnel photoeffect threshold [7,8]. The technology of manufacturing such a structure (see Fig.…”

Section: Theory Of Tunnel Photoeffectmentioning

confidence: 99%

Broadband photosensor with a tunable frequency range, built on the basis of nanoscale carbon structure with field localization

et al. 2014

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The work is devoted to the development of a new direction in creating of broadband photo sensors which distinctive feature is the possibility of dynamic adjustment of operating frequency range. The author's results of study of red threshold control of classic photoelectric effect were the basis for the work implementation. This effect was predicted theoretically and observed experimentally during irradiation of nanoscale carbon structure of planar-edge type by stream of low-energy photons. The variation of the accelerating voltage within a small range allows you to change photoelectric threshold for carbon in a wide range -from UV to IR. This is the consequence of the localization of electrostatic field at tip of the blade planar structure and of changes in the conditions of non-equilibrium electrons tunneling from the boundary surface of the cathode into the vacuum. The generation of nonequilibrium electrons in the carbon film thickness of 20 nm has a high speed which provides high performance of photodetector. The features of the use of nanoscale carbon structure photocurrent registration as in the prethreshold regime, and in the mode of field emission existence are discussed. The results of simulation and experimental examination of photosensor samples are given. It is shown that the observed effect is a single-photon tunneling. This in combination with the possibility of highspeed dynamic tuning determines the good perspectives for creation of new devices working in the mode of select multiple operating spectral bands for the signal recording. The architecture of such devices is expected to be significantly simpler than the conventional ones, based on the use of tunable filters.

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Controlling the red boundary of the tunneling photoeffect in nanodimensional carbon structures in a broad (UV-IR) wavelength range

Cited by 13 publications

References 10 publications

A Visible and Near-IR Tunnel Photosensor with a Nanoscale Metal Emitter: The Effect of Matching of Hot Electrons Localization Zones and a Strong Electrostatic Field

A Visible and Near-IR Tunnel Photosensor with a Nanoscale Metal Emitter: The Effect of Matching of Hot Electrons Localization Zones and a Strong Electrostatic Field

Modeling of Laser-Induced Plasmon Effects in GNS-DLC-Based Material for Application in X-ray Source Array Sensors

Broadband photosensor with a tunable frequency range, built on the basis of nanoscale carbon structure with field localization

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