2023
DOI: 10.1039/d3tc00210a
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Controlling the semiconductor–metal transition in Cu-intercalated TiSe2 by applying stress

Abstract: A possibility of efficient controlling the optoelectronic properties of quasi-two-dimensional transition metal chalcogenides could greatly expand their innovative applications. Titanium diselenide (TiSe2) is a scientifically and industrially important representative of...

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Cited by 2 publications
(3 citation statements)
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“…As shown in Fig. 6(a) and (b), 1T-TiS 2 and 1T-TiSe 2 are semiconductors with an indirect band gap between the L - and Γ points, which is consistent with recent experimental results, 14,15 as well as the results in the material database AFLOW. 22 As shown in Fig.…”
Section: Resultssupporting
confidence: 90%
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“…As shown in Fig. 6(a) and (b), 1T-TiS 2 and 1T-TiSe 2 are semiconductors with an indirect band gap between the L - and Γ points, which is consistent with recent experimental results, 14,15 as well as the results in the material database AFLOW. 22 As shown in Fig.…”
Section: Resultssupporting
confidence: 90%
“…13 1T-TiSe 2 is a 2D material. 13–15 The primitive cell of 1T-TiSe 2 has an Se–Ti–Se layer with a van der Waals interlayer distance of 3.121 Å.…”
Section: Resultsmentioning
confidence: 99%
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