Controlling Umklapp Scattering in a Bilayer Graphene Moiré Superlattice

Abstract

We present experimental findings on electron−electron scattering in two-dimensional moiréheterostructures with a tunable Fermi wave vector, reciprocal lattice vector, and band gap. We achieve this in high-mobility aligned heterostructures of bilayer graphene (BLG) and hBN. Around the half-full point, the primary contribution to the resistance of these devices arises from Umklapp electron−electron (Uee) scattering, making the resistance of graphene/hBN moirédevices significantly larger than that of non-aligned devices (where Uee is forbidden). We find that the strength of Uee scattering follows a universal scaling with Fermi energy and is nonmonotonically dependent on the superlattice period. The Uee scattering can be tuned with the electric field and is affected by layer polarization of BLG. It has a strong particle−hole asymmetry; the resistance when the chemical potential is in the conduction band is significantly lower than when it is in the valence band, making the electrondoped regime more practical for potential applications.

High-Mobility Compensated Semimetals, Orbital Magnetization, and Umklapp Scattering in Bilayer Graphene Moiré Superlattices

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