Converse piezoelectric effect induced misfit dislocation scattering in metal/AlGaN/GaN heterostructures

Abstract

Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures J. Appl. Phys. 115, 043702 (2014); 10.1063/1.4862803 Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors Appl.

Near-interface charged dislocations in AlGaN/GaN bilayer heterostructures

“…Misfit dislocations (MDs) and threading dislocations (TDs) are the common defects in AlGaN/GaN heterostructures. 6,7 The internal stress due to the lattice mismatch is the driving force for the formation of MDs. 8,9 TDs, however, are generated as a result of coalescence of adjacent grains during epitaxial growth at high temperatures with density ranging between 10 8 and 10 11 cm À2 .…”