“…On the basis of previous works on fabricating InSb nanostructures in solution, 40,47,49,50 we present a facile, one-pot, selfcatalyzed synthetic strategy by the well-established SLS mechanism 45,46,52,53 to grow InSb twinning superlattice NWs featuring fastest growth time (1 min) and lowest synthesis temperature (175 C), which even compared to other binary or pseudobinary III-V semiconductor nanowires with twinning superlattice structures formed via SLS as well as VLS growth mechanism. 16,19,20,[23][24][25]50,54 Furthermore, by means of the noncontact technique-optical pump-terahertz probe (OPTP) spectroscopy, we extract the ultrashort relaxation and recombination dynamics of photoconductivity lifetime in as-prepared InSb twinning superlattice NWs of just 9.1 ps at room temperature, indicating their great potential for high-speed photodetectors, transistors, and emitters.…”