Conversion model of enhanced low-dose-rate sensitivity for bipolar ICs

Першенков, В.С.; Savchenkov, D. V.; Bakerenkov, Alexander S.; Ulimov, V.N.

doi:10.1134/s1063739710020046

Cited by 21 publications

(7 citation statements)

References 16 publications

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“…Fitting of the following parameters was carried out for calculation: concentration of neutral hydrogen-containing traps C 0 T H0 and reaction rate constant k S (3). For other parameters, previously determined values were taken for hole transport in [16]: N 0 P = 2.2 • 10 19 cm −3 , E P1 = 0.26 eV, E Pk = 0.55 eV, E PP = 0.2 eV (with T = 300 K, E = 1 MV/cm) and for hydrogen ion transport in [13,14]: (6).…”

Section: Model Descriptionmentioning

confidence: 99%

“…The transformation mechanism is still unclear [1]. It is suggested in [3] that transformation of the trapped T + holes in SS occurs when an electron is trapped from the conduction band or when a hole is emitted into the valence band of a silicon substrate. In [4], instead of transformation, " border traps" are introduced which are located in oxide at a distance less than 3 nm from PB and may exchange their charges with the silicon substrate enough guickly by tunneling mechanism, which makes them similar to SS.…”

Section: Introductionmentioning

confidence: 99%

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Early formation of surface states in MOS structures under ionizing irradiation

Alexandrov O. V.

2023

Physics of the Solid State

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A quantitative model of the early formation of surface states (SS) in MOS structures under ionizing irradiation (II) with a limiting stage --- dispersion transport of holes has been developed. According to the model, the main contribution to the early formation of SS occurs during the microsecond pulse II for a thin gate dielectric and after the end of the pulse for a thick field oxide. The increase in the density of early SS after the end of II is associated with the presence of localized states and the dispersion transport of holes. The late formation of SS is limited by the dispersion transport of hydrogen ions, which delays the formation of late SS from 0.1 to 104 seconds or more. Keywords: MOSFET structure, ionizing irradiation, surface conditions, dispersion transport.

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Section: Model Descriptionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Early formation of surface states in MOS structures under ionizing irradiation

Alexandrov O. V.

2023

Physics of the Solid State

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“…Therefore using of known qualitative physical ELDRS models for a development of practical test methods is not solved problem so far. In [2,3] was presented so-called conversion model, in [4,5] were described the extracting of its fitting parameters and using conversion model for numerical estimation of long time operation bipolar devices in space environment.…”

Section: Introductionmentioning

confidence: 99%

Effect of Radiation Induced Charge Neutralization on ELDRS

Першенков

Bakerenkov

Yastrebov

et al. 2014

AMR

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“…In given work, at example of comparator, the quantitative numerical analysis of LM111 input current radiation degradation is considered at dose rate variation corresponding 12 hour orbit, cyclic device temperature variation and impact of solar flare. The basic conception of used ELDRS physical model (so-called conversion model [2]) is described to easier reading and better material understanding.…”

Section: Introductionmentioning

confidence: 99%

“…Excess input current of LM111 comparator versus total dose for 12 hour orbit dose rate variation (1) and constant averaged dose rate(2).…”

mentioning

confidence: 99%