Conversion of h-BN into c-BN for tuning optoelectronic properties

Haque, Ariful; Narayan, J.

doi:10.1039/d0ma00008f

Cited by 12 publications

(8 citation statements)

References 38 publications

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“…Detailed description of the characterization techniques, i.e., scanning electron microscopy (SEM), electron backscattering diffraction (EBSD), Raman spectroscopy, X-ray diffraction (XRD), and electrical measurements are described elsewhere. 21 2.2. SIMS.…”

Section: Methodsmentioning

confidence: 99%

“…To convert h-BN into c-BN, we have used a pulsed ArF laser (wavelength = 193 nm, pulse duration = 20 ns) and irradiated the C-doped h-BN films in air at energy densities in between 0.7 and 0.75 J cm –2 . Detailed description of the characterization techniques, i.e., scanning electron microscopy (SEM), electron backscattering diffraction (EBSD), Raman spectroscopy, X-ray diffraction (XRD), and electrical measurements are described elsewhere …”

Section: Methodsmentioning

confidence: 99%

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Tunable n-Type Conductivity and Transport Properties of Cubic Boron Nitride via Carbon Doping

Haque

Narayan

2021

ACS Appl. Electron. Mater.

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The recent discovery of direct conversion of hexagonal boron nitride (h-BN) into quenched BN (Q-BN) and single-crystal cubic BN (c-BN) by pulsed laser annealing (PLA) have been implemented to fabricate carbon-doped c-BN with dopant concentration ranging from 2 × 10 19 to 7 × 10 21 cm −3 . Micro Raman analysis shows a total conversion of h-BN into phase-pure c-BN, whereas the X-ray diffraction (XRD) confirms the presence of the cubic structure with (111) epitaxy on c-sapphire. Hall measurements demonstrate the n-type electrical property, and the temperature-dependent resistivity measurements confirm the semiconductor-like profile of the doped c-BN. Consistent changes in resistivity, Hall mobility, and other electrical properties were investigated with the variance in dopant concentration level. We have observed a shift in the conduction mechanism with temperature from the resistivity vs temperature analyses. At the hightemperature regime (130−330 K), the activation energy lies in between 0.012 and 0.074 eV, whereas at the low-temperature regime (20−130 K), the activation energy was obtained to be in between 0.0024 and 0.0083 eV. The lower values of activation energies, showing a complete ionization of the impurity atoms even at room temperature, are surmised to result from dopant-profile broadening. The enhanced electrical activation and superior quality c-BN films open exciting avenues for next-generation device applications.

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Section: Methodsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

Tunable n-Type Conductivity and Transport Properties of Cubic Boron Nitride via Carbon Doping

Haque

Narayan

2021

ACS Appl. Electron. Mater.

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“…It was found that the CS94 model describes the experimental data better. This observation might be further examined at high temperatures (e.g., T > 1500 K) using some novel experimental techniques, such as the pulsed laser annealing technique with superfast T -quenching capability [ 56 , 57 ].…”

Section: Discussionmentioning

confidence: 99%

Thermodynamics of Mg–Al Order-Disorder Reaction in MgAl2O4-Spinel: Constrained by Prolonged Annealing Experiments at 773–1123 K

Bao

Liu

2021

Molecules

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MgAl2O4-spinel has wide industrial and geological applications due to its special structural and physical–chemical features. It is presumably the most important endmember of complex natural spinel solid solutions, and therefore provides a structural model for a large group of minerals with the spinel structure. There exists a well known but still inadequately understood phenomenon in the structure of MgAl2O4-spinel, the Mg–Al cations readily exchanging their positions in response to variations of temperature, pressure, and composition. A large number of experiments were performed to investigate the Mg–Al cation order-disorder process usually quantified by the inversion parameter x (representing either the molar fraction of Al on the tetrahedral T-sites or the molar fraction of Mg on the octahedral M-sites in the spinel structure), and some thermodynamic models were thereby constructed to describe the x-T relation. However, experimental data at some key T were absent, so that the different performance of these thermodynamic models could not be carefully evaluated. This limited the interpolation and extrapolation of the thermodynamic models. By performing some prolonged annealing experiments with some almost pure natural MgAl2O4-spinel plates and quantifying the x values with single-crystal X-ray diffraction technique, we obtained some critical equilibrium x values at T down to 773 K. These new x-T data, along with those relatively reliable x values at relatively high T from early studies, clearly indicate that the CS94 Model (a model constructed by Carpenter and Salje in 1994) better describes the Mg–Al cation order-disorder reaction in MgAl2O4-spinel for a wide range of T. On the basis of the CS94 Model, a geothermometer was established, and its form is T-closure = 21362 × x3 − 12143 × x2 + 6401 × x − 10 (T-closure standing for the closure temperature of the Mg–Al cation exchange reaction). This geothermometer can be used to constrain the thermal history of the geological bodies containing MgAl2O4-spinel.

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“…Cubic boron nitride (c-BN) has a high hardness, good high-temperature chemical stability, corrosion resistance, and oxidation resistance [1][2][3][4][5][6][7]. It does not react with metals such as iron, cobalt, and nickel at high temperatures, making it the preferred material for processing ferrous metals [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…It does not react with metals such as iron, cobalt, and nickel at high temperatures, making it the preferred material for processing ferrous metals [1][2][3][4]. In addition, c-BN, as a third-generation semiconductor material, has excellent electrical and optical properties such as an ultra-wideband gap, high thermal conductivity, and a low dielectric constant [5][6][7]. It has broad application prospects in fields such as high-power electronics, deep ultraviolet optoelectronics, and quantum communication.…”

Section: Introductionmentioning

confidence: 99%

First-principles study on structural, mechanical, electrical, optical and thermal properties of lithium- and calcium-based catalysts

Lv,

Guo,

Cai

2024

Mater. Res. Express

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This work presents a systematic first-principles study of the crystal structure, mechanical, electrical, optical, and thermodynamic properties of lithium- and calcium-based catalysts (Li3N, Ca3N2, Li3BN2, and Ca3B2N4) for the production of c-BN. The mechanical findings indicate that Ca3N2 is identified as a ductile material, with a higher B/G (20.04) and Poisson's ratio (0.48). The other three materials are recognized as brittle materials, with B/G less than 1.75 and Poisson ratio less than 1/3. The electrical discoveries show that Li3BN2 has the widest band gap among the four catalyst materials, and the band gap of ternary catalyst materials (Li3BN2 and Ca3B2N4) is larger than that of corresponding binary catalyst materials (Li3N and Ca3N2). The optical results reveal thatLi3N, Ca3N2, Li3BN2,and Ca3B2N4 have sufficient energy to prevent charge carriers from being scattered or captured by material defects. The absorption peaks of Ca-based materials (Ca3N2 and Ca3B2N4) are significantly higher than those of Li-based materials (Li3N and Li3BN2). In this frequency range,the light is the most difficult to pass through in Ca3N2 and the easiest to propagate in Ca3B2N4. The connection between Li3N and Ca3N2 bands is greater, while the Li3BN2 and Ca3B2N4 bands interact rather weakly. The thermodynamic conclusions demonstrate that the thermal stability of the four structures is as follows: Li3N< Ca3N2< Li3BN2< Ca3B2N4. The heat capacities of Li3N, Ca3N2, Li3BN2, and Ca3B2N4 tend to approach 23.74, 52.05, 70.73, and 311.48 J∙mol−1∙K−1, respectively.

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Conversion of h-BN into c-BN for tuning optoelectronic properties

Abstract: Phase pure c-BN and mixed phased h-BN and c-BN films on c-sapphire were fabricated by pulsed laser annealing for tuning optical properties.

Cited by 12 publications

References 38 publications

Tunable n-Type Conductivity and Transport Properties of Cubic Boron Nitride via Carbon Doping

Tunable n-Type Conductivity and Transport Properties of Cubic Boron Nitride via Carbon Doping

Thermodynamics of Mg–Al Order-Disorder Reaction in MgAl2O4-Spinel: Constrained by Prolonged Annealing Experiments at 773–1123 K

First-principles study on structural, mechanical, electrical, optical and thermal properties of lithium- and calcium-based catalysts

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