Conversion of n-type to p-type conductivity in ZnO by incorporation of Ag and Ag-Li

Rahman, Md. Ferdous; Kamruzzaman, M.; Zapien, Juan Antonio; Afrose, R.; Anam, T. K.; Liton, M. N. H.; Helal, M. A.; Khan, M.K.R.

doi:10.1016/j.mtcomm.2022.104278

Cited by 9 publications

(3 citation statements)

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“…Several approaches to achieve p-type conductivity have employed Li [18], N [19,20], Na [21], P [13], Mg [22], and configurations using N as a co-dopant [23][24][25] with success in a laboratory environment. However, p-type ZnO film is of low stability, and the results are difficult to reproduce on a large scale, given the absence of good rectification in the ZnO p-n homojunction [22,23,26,27].…”

Section: Introductionmentioning

confidence: 99%

Exploring Na Doping in ZnO Thin Films: Electrical and Optical Insights

Silva,

Vargas,

Peres

et al. 2024

Coatings

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Strategies to achieve p-type behavior in semiconductor oxides are an important current topic of research. Our study showed that sodium-doped zinc oxide thin films are a plausible approach. The insertion of dopant allowed a transition between n-type p-type electrical behavior in specific temperature ranges around 300 K. Annealing procedures under controlled atmospheres, including Ar, N2, and O2, increased the hole density up to a magnitude of 1016 cm−3, although this also reduced the window temperature. The micro-photoluminescence spectra showed an enhancement of defect-related emissions as the dopant content increased. Notably, yellow-green emissions (around 2.38 eV–520 nm) were the most prominent in the as-grown samples. After annealing, a strong redshift of the defect band was observed (around 1.85 eV–670 nm). Our findings showed that p-type ZnO:Na films exhibited emissions associated with RGB primary colors. In a chromaticity diagram, as-grown samples appeared near the white range, annealed films were close to the warm white area, and O2 annealed films trended within the red range.

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Section: Introductionmentioning

confidence: 99%

Exploring Na Doping in ZnO Thin Films: Electrical and Optical Insights

Silva,

Vargas,

Peres

et al. 2024

Coatings

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“…Within all the experimental methodologies addressed for the manufacture of p-type ZnO, the double doping method, in which the dopant can be either a double acceptor (acceptor-acceptor) or acceptordonor, has proved to be the best channel to overcome these difficulties. The double-doping method using two acceptor agents to prepare p-type ZnO, Li-N [13,14], Ag-Li [15] or Cu-N [16] dopants have been recently investigated. Additionally, experimental publications have been reported on the manufacture of p-type ZnO:Ag,N thin films with good electrical properties obtained by the ultrasonic pyrolytic spray technique [17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Long Electrical Stability on Dual Acceptor P-Type ZnO:Ag,N Thin Films

Avelar Muñoz,

Gómez Rosales,

Ortiz Hernández

et al. 2024

Preprint

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p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The deposited films were amorphous. However, after annealing they crystallize in the typical hexagonal wurtzite structure of ZnO. The Ag-N dual acceptors were incorporated substitutionally in the structure of zinc oxide and achieving that the three samples presented the p-type conductivity in the ZnO. Initial electrical properties showed a low resistivity of from 1 to10^{−3} Ω.cm, Hall mobility of tens cm2/V.s and a hole concentration from 10^{17} to 10^{19} cm^{−3}. The electrical stability analysis reveals that the p-type conductivity of the ZnO:Ag,N films is very stable and does not revert to n-type, even after 36 months of aging. These results reveal the feasibility of using these films for applications in short-wavelength or transparent optoelectronic devices.

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“…Within all the experimental methodologies addressed for the manufacture of p-type ZnO, the double doping method, in which the dopant can be either a double acceptor (acceptor-acceptor) or acceptor-donor, has proved to be the best channel to overcome these difficulties. The double-doping method using two acceptor agents to prepare p-type ZnO, Li-N [ 13 , 14 ], Ag-Li [ 15 ], or Cu-N [ 16 ] dopants has been recently investigated. Additionally, experimental publications have been reported on the manufacture of p-type ZnO:Ag,N thin films with good electrical properties obtained by the ultrasonic pyrolytic spray technique [ 17 , 18 , 19 , 20 ].…”

Section: Introductionmentioning

confidence: 99%

Long Electrical Stability on Dual Acceptor p-Type ZnO:Ag,N Thin Films

Avelar-Muñoz,

Gómez-Rosales,

Ortiz-Hernández

et al. 2024

Micromachines

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p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The deposited films were amorphous. However, after annealing, they crystallize in the typical hexagonal wurtzite structure of ZnO. The Ag-N dual acceptors were incorporated substitutionally in the structure of zinc oxide, and achieving that; the three samples presented the p-type conductivity in the ZnO. Initial electrical properties showed a low resistivity of from 1 to 10−3 Ω·cm, Hall mobility of tens cm2/V·s, and a hole concentration from 1017 to 1019 cm−3. The electrical stability analysis reveals that the p-type conductivity of the ZnO:Ag,N films is very stable and does not revert to n-type, even after 36 months of aging. These results reveal the feasibility of using these films for applications in short-wavelength or transparent optoelectronic devices.

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Conversion of n-type to p-type conductivity in ZnO by incorporation of Ag and Ag-Li

Cited by 9 publications

References 104 publications

Exploring Na Doping in ZnO Thin Films: Electrical and Optical Insights

Exploring Na Doping in ZnO Thin Films: Electrical and Optical Insights

Long Electrical Stability on Dual Acceptor P-Type ZnO:Ag,N Thin Films

Long Electrical Stability on Dual Acceptor p-Type ZnO:Ag,N Thin Films

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