Conversion Process of Perhydropolysilazane to Silica<sup>※</sup>

Wang, Dan; Guo, Xiang; Li, Pengfei; Zhang, Yulin; Xu, Caihong; Zhang, Zongbo

doi:10.6023/a21120621

Cited by 3 publications

(3 citation statements)

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“…Figure S3a (Supporting Information) shows the result that nanoscale small voids were also formed, which was then ascribed to the evaporation of solvents and release of hydrogen during the densification of the PHPS film. [ 56 ] However, the voids with a scale of 0.5 µm or more were only found on the PHPS film measured in the air, indicating that such larger voids should be due to the interaction of the PHPS films with ambient air. Knowing that PHPS has a high reactivity with moisture, we speculate that the incomplete conversion of the PHPS film in N 2 atmosphere under VUV irradiation leads to a violent reaction with moisture in ambient air, causing the formation of voids.…”

Section: Resultsmentioning

confidence: 99%

In Situ Solution‐Processed Submicron Thick SiO_xC_y/a‐SiN_x(O):H Composite Barrier Film for Polymer:Non‐Fullerene Photovoltaics

Qin

Chen

et al. 2023

Small Methods

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Aiming to improve the environmental stability of organic photovoltaics, a multilayered SiOxCy/a‐SiNx(O):H composite barrier film coated with a hydrophobic perfluoro copolymer stop layer for polymer:non‐fullerene solar cells is developed. The composite film is prepared by spin‐coating of polysilicone and perhydropolysilazane (PHPS) following a densification process by vacuum ultraviolet irradiation in an inert atmosphere. The transformation of polysilicone and PHPS to SiOxCy and a‐SiNx(O):H is confirmed by Fourier transform infrared and energy‐dispersive X‐ray spectroscopy measurement. However, the as‐prepared PHPS‐derived silicon nitride (PDSN) can react with moisture in the ambient atmosphere, yielding microscale defects and a consequent poor barrier performance. Treating the incomplete PDSN with methanol vapor significantly densifies the film yielding low water vapor transmission rates (WVTRs)of 5.0 × 10−1 and 2.0 × 10−1 g m−2 d−1 for the one‐ and three‐couple of SiOxCy/a‐SiNx(O):H (CON) composite films, respectively. By incorporating a thin hydrophobic perfluoro copolymer layer, the three‐coupled methanol‐treated CON film with a total thickness of 600 nm shows an extremely low WVTR of 8.7 × 10−4 g m−2 d−1. No performance decay is measured for the PM6:Y6 and PM6:L8‐BO cells after such an encapsulation process. These encapsulated polymer cells show good stability storaged at 25 °C/50% relative humidity, or under simulated extreme rainstorm tests.

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Section: Resultsmentioning

confidence: 99%

In Situ Solution‐Processed Submicron Thick SiO_xC_y/a‐SiN_x(O):H Composite Barrier Film for Polymer:Non‐Fullerene Photovoltaics

Qin

Chen

et al. 2023

Small Methods

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“…Previous studies suggest that this rapid weight gain may result from the oxidation of the remaining Si–H and Si–N bonds (Scheme ). ,,, This finding aligns with the observed decrease in Si–N and Si–H bonds and the concurrent increase in Si–O–Si bonds, as depicted in Figure b.…”

Section: Results and Discussionmentioning

confidence: 99%

Thermal Conversion Process of Tetraethyl Orthosilicate-Based Silica Sol and Perhydropolysilazane into Inorganic Silica Films

Zhang

Wang

et al. 2023

Crystal Growth & Design

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As the source for inorganic silica films in the solution process, perhydropolysilazane (PHPS) and silica sol derived from sol–gel chemistry have been widely adopted. During the conversion from solution precursors to inorganic silica, high-temperature treatment is crucial for the inorganic material’s final composition and densification. However, the conversion processes of PHPS and silica sol into inorganic silica differ significantly, which has not been thoroughly investigated. Therefore, this study systematically examines the thermal conversion process of PHPS and tetraethyl orthosilicate (TEOS)-derived silica sols. Results reveal that the conversion of PHPS into inorganic silica involves hydrolysis, oxidation, and condensation reactions of Si–H, Si–N, and N–H bonds. In contrast, TEOS hydrolysis produces silica sol with −OH groups, which undergoes dehydration condensation and sintering during high-temperature thermal treatment. After heat treatment at 500 °C, the chemical structure of TEOS-derived films converts to resemble inorganic amorphous silica, while complete conversion of PHPS-derived films requires 600 °C, with densification processes occurring for both films as the temperature rises to 800 °C. Moreover, these distinct conversion processes may lead to differences in stress generation, resulting in higher density, mechanical strength, and critical cracking thickness for PHPS-derived compared to TEOS-derived films. These findings provide guidelines for the application of two kinds of solution precursor for inorganic silica films.

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“…As temperature increases, this characteristic becomes more obvious [35] . The output current of the traditional structure drain is smaller than that of the new structure at the identical gate voltage, and it can be deduced that the new device has a more potent gate control capacity through the assessment of its transfer characteristics [36] .…”

Section: Transfer Characteristics Of Devicesmentioning

confidence: 99%

Enhancing the Self-Heating Capability of AlGaN/GaN HEMT Gadgets with Fourth-Generation Semiconductor Components

Gao,

Tang,

Cao

2024

Advances in Transdisciplinary Engineering

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GaN possesses numerous exceptional properties, such as wide bandgap and high thermal conductivity, which make it an ideal material for fabricating semiconductor devices. The high electric field and current in the channel, coupled with the high power density, make it inevitable that HEMT devices will generate a great deal of heat. Thus, an increase in temperature will unavoidably cause the DC and microwave characteristics of the device to deteriorate. At present, the fourth-generation semiconductor materials with new ultra-broad or ultra-narrow band gaps, mainly Ga2O3, GaSb, diamond and AIN, have emerged. In conventional situations, the substrate material will be Si, Sapphire, or the more advanced third-generation material SiC compared to the former, and the passivation layer will use SiN as the material. Our research is in progress to replace the traditional SiN and third-generation SiC with diamond and GaSb.

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Conversion Process of Perhydropolysilazane to Silica^※

Cited by 3 publications

References 50 publications

In Situ Solution‐Processed Submicron Thick SiO_xC_y/a‐SiN_x(O):H Composite Barrier Film for Polymer:Non‐Fullerene Photovoltaics

In Situ Solution‐Processed Submicron Thick SiO_xC_y/a‐SiN_x(O):H Composite Barrier Film for Polymer:Non‐Fullerene Photovoltaics

Thermal Conversion Process of Tetraethyl Orthosilicate-Based Silica Sol and Perhydropolysilazane into Inorganic Silica Films

Enhancing the Self-Heating Capability of AlGaN/GaN HEMT Gadgets with Fourth-Generation Semiconductor Components

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Conversion Process of Perhydropolysilazane to Silica※

Cited by 3 publications

References 50 publications

In Situ Solution‐Processed Submicron Thick SiOxCy/a‐SiNx(O):H Composite Barrier Film for Polymer:Non‐Fullerene Photovoltaics

In Situ Solution‐Processed Submicron Thick SiOxCy/a‐SiNx(O):H Composite Barrier Film for Polymer:Non‐Fullerene Photovoltaics

Thermal Conversion Process of Tetraethyl Orthosilicate-Based Silica Sol and Perhydropolysilazane into Inorganic Silica Films

Enhancing the Self-Heating Capability of AlGaN/GaN HEMT Gadgets with Fourth-Generation Semiconductor Components

Contact Info

Product

Resources

About

Conversion Process of Perhydropolysilazane to Silica^※

In Situ Solution‐Processed Submicron Thick SiO_xC_y/a‐SiN_x(O):H Composite Barrier Film for Polymer:Non‐Fullerene Photovoltaics

In Situ Solution‐Processed Submicron Thick SiO_xC_y/a‐SiN_x(O):H Composite Barrier Film for Polymer:Non‐Fullerene Photovoltaics