Cooperative Chemical Rebonding In The Segregation Of Impurities In Silicon Grain Boundaries

Abstract

DISCLAIMER ABSTRACTWith ab initio calculations we show that the experimentally observed large segregation energies of As at Si grain boundaries can be explained by the formation of isolated dimers or ordered chains of dimers of ?hreefoZd-coordimfed As along the cores of grain boundary dislocations. We dso find the intriguing possibility that As segregation may drive structural transformation of certain grain boundaries. Recently we have obtained the first atomic-resolution STEM images of As in a Si grain boundary, consistent with the formation of As dimers. Segregation energy of As dimers was found to be significantly higher in isolated dislocation cores, where larger site-variation in strain than in grain boundaries lead to further lowering of the electronic levels of As deep into . the bandgap.