Band
gap tuning is at the core of current optical and electronic
device applications, the wide-band-gap chalcogenides are especially
challenging and highly desired in many fields, such as nonlinear optical
materials. On the basis of our in-depth investigation on the complicated
cubic AII
6(BI
2CII)DIV
4S16 family, we reveal that
the structural complexity causes the band gap tuning to be determined
by multiple factors, in which a “bucket effect” is uncovered.
Guided by such a bucket effect strategy, we rationally synthesized
two new members, Sr6(Li2Cd)A4S16 (A = Ge (1; a = 13.916 Å),
Sn (2; a = 14.237 Å), via a site-specific
substitution. 1 exhibits the widest band gap (3.8 eV)
in this family known to date. Benefiting from their wide band gaps, 1 and 2 exhibit excellent laser irradiation duration
capability, with laser-induced damage thresholds (LIDTs) of 55.5 and
44.4 MW/cm2 at a 1.064 μm incident laser, which are
21 and 17 times higher than that of the benchmark AgGaS2 (2.69 MW/cm2). Especially, the LIDT of 1 is the highest known to date among the cubic AII
6BI
2CIIDIV
4S16 family. Our insight into the band gap tuning
in a complex system should shed useful light on the future design
of functional materials and band gap engineering.