Copper diffusion in copper sulfide: a systematic study

Cassaignon, Sophie; Pauporté, Th.; Guillemoles, Jean‐François; Vedel, J.

doi:10.1007/bf02375879

Cited by 31 publications

(25 citation statements)

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“…Copper sulde is well known to form a wide variety of nonstoichiometric and mixed phases, djurleite, digenite, etc. 51,52 Utilizing its intrinsic cationic deciencies, [53][54][55][56][57] a heterostructured Cu 2 S-In 2 S 3 nanocrystal has been reported by using djurleite Cu 1.94 S nanocrystals as a catalyst. 31 Also, Cui et al 58 reported that heterostructured CuInS 2 nanorods were epitaxially overgrown on chalcocite Cu 2 S nanodisks, starting with nucleation of Cu 2 S nanodisks.…”

Section: Resultsmentioning

confidence: 99%

Wurtzite CuInS2 and CuInxGa1−xS2 nanoribbons: synthesis, optical and photoelectrical properties

Zhai

Zou

et al. 2013

Nanoscale

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Single crystalline wurtzite ternary and quaternary semiconductor nanoribbons (CuInS(2), CuIn(x)Ga(1-x)S(2)) were synthesized through a solution-based method. The structure and composition of the nanoribbons were characterized by X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), the corresponding fast Fourier transform (FFT) and nanoscale-resolved elemental mapping. Detailed investigation of the growth mechanism by monitoring the structures and morphologies of the nanoribbons during the growth indicates that Cu(1.75)S nanocrystals are formed first and act as a catalyst for the further growth of the nanoribbons. The high mobility of Cu(+) promotes the generation of Cu(+) vacancies in Cu(1.75)S, which will facilitate the diffusion of Cu, In or Ga species from solution into Cu(1.75)S to reach supersaturated states. The supersaturated species in the Cu(1.75)S catalyst, Cu-In-S and Cu-In-Ga-S species, start to condense and crystallize to form wurtzite CuInS(2) or CuIn(x)Ga(1-x)S(2) phases, firstly resulting in two-sided nanoparticles. Successive crystallizations gradually impel the Cu(1.75)S catalyst head forward and prolong the length of the CuInS(2) or CuIn(x)Ga(1-x)S(2) body, forming heterostructured nanorods and thus nanoribbons. The optical band gaps of CuIn(x)Ga(1-x)S(2) nanoribbons can be continuously adjusted between 1.44 eV and 1.91 eV, depending on the Ga concentration in nanoribbons. The successful preparation of those ternary and quaternary semiconductor nanoribbons provide us an opportunity to study their photovoltaic properties. The primary photoresponsive current measurements demonstrate that wurtzite CuIn(x)Ga(1-x)S(2) nanoribbons are excellent photoactive materials. Furthermore, this facile method could open a new way to synthesize other various nano-structured ternary and quaternary semiconductors, such as CuInSe(2) and CuIn(x)Ga(1-x)Se(2), for applications in solar cells and other fields.

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Section: Resultsmentioning

confidence: 99%

Wurtzite CuInS2 and CuInxGa1−xS2 nanoribbons: synthesis, optical and photoelectrical properties

Zhai

Zou

et al. 2013

Nanoscale

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“…[48][49][50] In the anodization process, an electric field, the magnitude of which is proportional to the anodization voltage, is induced between copper anode and the cathode that enhances the diffusion rate of Cu + in the copper sulfide film. The diffusion coefficient [51][52][53] of Cu in copper sulfides is 10 4 -10 5 cm 2 s −1 . Fast Cu + diffusion coupled with high affinity between copper and sulfur is the cause of fast kinetics of the vertically aligned copper sulfide nanostructure growth.…”

Section: Growth Mechanism Of Anodized Copper Sulfide Nanostructuresmentioning

confidence: 99%

Anodic Cu₂S and CuS nanorod and nanowall arrays: preparation, properties and application in CO₂ photoreduction

et al. 2014

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Copper sulfide semiconductors made from earth-abundant elements have an optical absorption edge at ca. 1.2 eV, nearly ideal for solar energy harvesting. We report the growth and formation mechanism of vertically oriented arrays of copper sulfide nanostructures formed by electrochemical anodization. Key parameters that affect the morphology and phase of the nanostructures are type and strength of electrolyte, anodization voltage and duration. Cu₂S and CuS nanostructures were obtained on both copper foil and copper-coated flexible Kapton substrates, and depending on the anodization parameters, consisted of vertically oriented arrays of nanowalls, nanoleafs or rods with branched nanodendrites. The anodization parameters also controlled the phase and stoichiometry of the nanostructures. p-type conduction for Cu₂S nanostructures and n-type conduction for CuS nanostructures were revealed by admittance spectroscopy and Mott Schottky analysis. We also observed a weak, but nevertheless promising and previously unnoticed, photocatalytic action in copper sulfide nanorod and platelet arrays for the sunlight-driven conversion of CO₂ into CH₄. Under irradiation by AM 1.5G simulated sunlight at room temperature, a CH₄ production rate as high as 38 μmol m(-2) h(-1) was obtained using the copper sulfide nanostructure arrays as stand-alone photocatalysts for CO₂ photoreduction.

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“…Research on the historical Cu 2 S/CdS solar cell has been abandoned due to long term stability problems from degradation of the Cu 2 S layer in air, 18 but also from inevitable diffusion of copper ions into the CdS layer 11,12,19 due to the unusually high mobility of the Cu atoms. 20 Nevertheless, alternative solar cell concepts like the Cu 2 S/ZnO-heterostructure, for which an attainable power conversion of g ¼ 17:8% has been predicted, 21 the ZnO/Cu 2 S/Cu 2 O p-i-n structure 22 and the Cu 2 S/Ti 2 O heterojunctions [23][24][25] are feasible.…”

Section: Introductionmentioning

confidence: 99%

Detailed photoluminescence studies of thin film Cu2S for determination of quasi-Fermi level splitting and defect levels

Sträter

Brüggemann

Siol

et al. 2013

Journal of Applied Physics

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We have studied chalcocite (Cu 2 S) layers prepared by physical vapor deposition with varying deposition parameters by calibrated spectral photoluminescence (PL) and by confocal PL with lateral resolution of D x % 0:9 lm. Calibrated PL experiments as a function of temperature T and excitation fluxes were performed to obtain the absolute PL-yield and to calculate the splitting of the quasi-Fermi levels (QFLs) l ¼ E f ;n À E f ;p at an excitation flux equivalent to the AM 1.5 spectrum and the absorption coefficient að hxÞ, both in the temperature range of 20 K T 400 K. The PL-spectra reveal two peaks at E #1 ¼ 1:17 eV and E #2 ¼ 1:3 eV. The samples show a QFL-splitting of l > 700 meV associated with a pseudo band gap of E g ¼ 1:25 eV. The high-energy peak shows an unexpected temperature behavior, namely, an increase of PL-yield with rising temperature at variance with the behavior of QFL-splitting that decreases with rising T. Our observations indicate that, contrary to common believe, it is not the PL-yield, but rather the QFL-splitting that is the comprehensive indicator of the quality of the excited state in an illuminated semiconductor. A further examination of the lateral variation of opto-electronic properties by confocal PL and the surface contour shows no detectable correlation between Cu 2 S grains/grain boundaries and the PL-yield or QFL-splitting. V

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Copper diffusion in copper sulfide: a systematic study

Cited by 31 publications

References 31 publications

Wurtzite CuInS2 and CuInxGa1−xS2 nanoribbons: synthesis, optical and photoelectrical properties

Wurtzite CuInS2 and CuInxGa1−xS2 nanoribbons: synthesis, optical and photoelectrical properties

Anodic Cu₂S and CuS nanorod and nanowall arrays: preparation, properties and application in CO₂ photoreduction

Detailed photoluminescence studies of thin film Cu2S for determination of quasi-Fermi level splitting and defect levels

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Copper diffusion in copper sulfide: a systematic study

Cited by 31 publications

References 31 publications

Wurtzite CuInS2 and CuInxGa1−xS2 nanoribbons: synthesis, optical and photoelectrical properties

Wurtzite CuInS2 and CuInxGa1−xS2 nanoribbons: synthesis, optical and photoelectrical properties

Anodic Cu2S and CuS nanorod and nanowall arrays: preparation, properties and application in CO2 photoreduction

Detailed photoluminescence studies of thin film Cu2S for determination of quasi-Fermi level splitting and defect levels

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Product

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Anodic Cu₂S and CuS nanorod and nanowall arrays: preparation, properties and application in CO₂ photoreduction