2011
DOI: 10.1016/j.tsf.2010.12.009
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Copper doped nickel oxide transparent p-type conductive thin films deposited by pulsed plasma deposition

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Cited by 49 publications
(22 citation statements)
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“…NiO can be used as gas sensor, fuel cell electrodes, organic solar cells, transparent p-type conductive films, lithium-ion batteries and organic light-emitting devices [4][5][6][7][8][9].…”
Section: Introductionmentioning
confidence: 99%
“…NiO can be used as gas sensor, fuel cell electrodes, organic solar cells, transparent p-type conductive films, lithium-ion batteries and organic light-emitting devices [4][5][6][7][8][9].…”
Section: Introductionmentioning
confidence: 99%
“…It is to be mention that the reported electrical resistivity of RF magnetron-sputtered Cu 2 O and NiO films was 9.6 × 10 1 Ωcm and 8.0 × 10 5 Ωcm, and the equimolar Cu-Ni oxide films, it was 3.0 × 10 4 Ωcm [12]. Yang et al [11] achieved low electrical resistivity of 0.2 Ωcm in Ni 0.9 Cu 0.1 O films formed by pulsed plasma deposition and Chen et al [9] noticed that the resistivity decreased from 0.12 to 0.07 Ωcm with the increase of copper from 10 to 18 at% in RF magnetron-sputtered NiO films. In contrast to this, Kikuchi et al [25] reported that the electrical resistivity of the increase of sputter power from 3.1 to 5.1 W/cm 2 , thereafter, it decreased to 20 cm 2 /Vsec at higher sputter power of 6.1 W/cm 2 as shown in Figure 9.…”
Section: Atomic Force Micrograph Studiesmentioning
confidence: 98%
“…The electrical resistivity of the films also decreased with the increase in the content of copper in NiO films. Yang et al [11] reported electrical resistivity of 0.19 Ωcm and optical bandgap of 3.7 eV in ptype Ni 0.9 Cu 0.1 O films formed by pulsed plasma deposition. Miyata et al [12] deposited p-type Cu 2 O-NiO films with various concentrations of Cu 2 O by RF magnetron sputtering and found electrical resistivity of 2 × 10 4 Ωcm, hall mobility of 2.5 cm 2 /Vsec, and optical bandgap of 2.9 eV in 50% of copperdoped NiO films.…”
Section: Introductionmentioning
confidence: 99%
“…24 The presence of low amounts of Cu in NiO (upon doping during the sputtering process) was recently found to have interesting applications in optoelectronic devices due to the enhanced electrical conductivity of the transparent NiO. 25 Low amounts of Ni being present in cuprous oxide thin films are also highly interesting for photovoltaic power generation; a suppression of the reduction process of CuO to Cu 2 O being attributed to the presence of Ni. 26 In the present work, a Cu-Ni oxide thin film combinatorial library produced by reactive sputtering from a Cu-Ni sectioned cathode is investigated.…”
Section: Introductionmentioning
confidence: 99%