Copper doping effects on the optical and dielectric properties of amorphous indium selenide thin films

Qasrawi, A. F.; Aboalrub, Fatima M.

doi:10.1007/s11082-023-05314-6

Cited by 3 publications

(4 citation statements)

References 36 publications

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“…The latter explains the reason for the higher free charge carrier concentration associated with the crystallinity of the films. Compared to the data published in [40], although the increase in the drift mobility values is not much pronounced, for the first three oscillators eV, the plasmon frequency and free electron concentration are highly increased 12.2 and 150, 4.1 and 17.5 and 1.3 and 1.6 times, respectively. These features which are reached via pulsed laser assisted crystallinity of the films within one second make the material more effective in optoelectronic technology [55][56][57].…”

Section: Resultscontrasting

confidence: 80%

“…It is also seen from R spectra illustrated in figure 3(b) that the crystallinity of films is accompanied with a remarkable decrease in the reflectance value. It is well known that the reflectance of amorphous films is always larger than that of crystalline films because of the formation of grains in the latter films [40]. The same phenomena were previously observed for InSe thin films prepared by a vacuum evaporation technique and annealed at 673 K [41].…”

Section: Resultssupporting

confidence: 75%

“…It means five linearly summed oscillators are sufficient to reproduce the experimental data of optical conductivity. As compared to the published data (our work) about amorphous InSe films[40], the listed data show no major difference in the values of E .…”

supporting

confidence: 57%

“…It is also noted that; in the infrared (IR) range of light (1.17-1.74 eV) e im values of CIS films are larger than those of AIS indicating enhanced optical conductivity in the infrared range of light. Repeated calculated of the optical conductivity parameters using Drude-Lorentz model through the relations [40,43],…”

Section: Resultsmentioning

confidence: 99%

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Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Khusayfan,

Qasrawi,

Khanfar

et al. 2024

Phys. Scr.

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In the current study the crystalline phase of indium selenide thin films which were grown by the thermal evaporation technique is achieved via pulsed laser welding technique (PLW) in a second. The films crystallinity is achieved under various welding conditions including the pulse width (PW), repetition frequency (f_r ) and pulse diameter (d). The optimum parameters for obtaining well crystalline phase are PW=1.0 ms, f_r=10Hz and d=1.0 mm. PLW induced crystallinity showed preferred structure relating to monoclinic phase of InSe. Compositionally while amorphous films exhibited In2Se3 chemical structure, crystalline ones preferred InSe phase. Associated with this type of crystallinity, direct and indirect energy band gap values of 2.32 eV and 3.12 eV are determined. The crystalline films showed lower dielectric constant value accompanied with higher optical conductivity and higher terahertz cutoff frequency in the infrared range of light. In addition the dielectric dispersion spectra were treated using Drude-Lorentz model to read the optical conductivity parameters for the PLW assisted crystalline InSe terahertz resonators. The treatment showed that the crystallinity of the films resulted in improved free carrier density, longer relaxation times at femtosecond level, larger plasmon frequencies and higher drift mobility values. These features together with the response of terahertz cutoff frequency to IR excitations make crystalline InSe thin films promising for optoelectronic and terahertz technology applications.

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Section: Resultscontrasting

confidence: 80%

Section: Resultssupporting

confidence: 75%

supporting

confidence: 57%

Section: Resultsmentioning

confidence: 99%

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Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Khusayfan,

Qasrawi,

Khanfar

et al. 2024

Phys. Scr.

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Formation, Enhanced Crystallization, Optical Absorption and Electrical Conduction in Copper Indium Selenide Thin Films Prepared via Pulse Laser Welding Technique

Khusayfan,

Khanfar,

Alharbi

2023

Cryst. Res. Technol.

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In this study, thin films of CuInSe2 (CIS) are expeditiously fabricated within 1 s utilizing the pulsed laser welding (PLW) technique. Preceding the PLW process, thin films of InSe (500 nm) are coated with Cu nanosheets of 60 and 120 nm thicknesses using vacuum coating systems. The optimal PLW parameters leading to the formation of CIS films include a pulse width of 1.0 ms, a spot diameter of 2.0 mm, and a repetition frequency of 10 Hz. The resulting CIS films exhibited a well‐crystalline cubic structure with lattice parameters of 5.265 Å. Surface morphology analyses revealed the preferential formation of porous films with varying stoichiometry, a characteristic that can be manipulated by adjusting laser welding parameters. The energy band gap and room temperature electrical conductivity display values of 1.80 eV and 2.06 × 10−5 (Ωcm)−1, respectively. Cu‐rich samples exhibit a wider energy band gap of 1.94 eV and lower electrical conductivity values of 4.78 × 10−7 (Ωcm)−1. The CIS film demonstrates n‐type conductivity attributed to the formation of donor levels centered at 0.24 and 0.10 eV. This study presents an ultrafast method for fabricating CIS films with physical properties compatible with those produced using traditional methods.

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InSe/CrSe Interfaces Performed as Resistive Switches and Band Filters for Gigahertz/Terahertz Communication Technology Applications

Algarni,

Qasrawi,

Khusayfan

2023

Opt Quant Electron

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Copper doping effects on the optical and dielectric properties of amorphous indium selenide thin films

Cited by 3 publications

References 36 publications

Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Formation, Enhanced Crystallization, Optical Absorption and Electrical Conduction in Copper Indium Selenide Thin Films Prepared via Pulse Laser Welding Technique

InSe/CrSe Interfaces Performed as Resistive Switches and Band Filters for Gigahertz/Terahertz Communication Technology Applications

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