Copper gate AlGaN/GaN HEMT with low gate leakage current

Ao, Jin‐Ping; Kikuta, Daigo; Kubota, Naotaka; Naoi, Yoshiki; Ohno, Yasuo

doi:10.1109/led.2003.815158

Cited by 70 publications

(23 citation statements)

References 11 publications

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“…6,7 These advantages will certainly generate much interest in using Cu metallization on GaN devices as well. In fact, Cu has been demonstrated to perform well as gate contacts 8,9 and as interconnects 10 on the GaN HEMTs. Nevertheless, the diffusion of Cu into GaN at elevated temperatures can be detrimental to the GaN devices.…”

mentioning

confidence: 99%

Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors

Wong

Chen

Maa

et al. 2013

Applied Physics Letters

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Ti/Al/Ni/Cu ohmic contact for AlGaN/GaN structure has been fabricated. The Ni layer played an important role in achieving low specific contact resistance (rc), smooth morphology, and excellent edge acuity. With a 50-Å Ni layer, a rc of 1.35 × 10−6 Ω-cm2 and a root-mean-square roughness of 7.65 nm have been realized. The characterization results indicated that no evidence of Cu diffusion into the semiconductor layers. The formation of Al-Cu and Ti-Cu alloys might have confined the Cu within the ohmic metal. In the absence of gold, the surface roughening caused by Au-Al alloy in conventional Ti/Al/Ni/Au structure was also prevented.

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mentioning

confidence: 99%

Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors

Wong

Chen

Maa

et al. 2013

Applied Physics Letters

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“…[6,8,15,16] To enhance the gate controllability of Schottky gate GaN HEMTs, high-quality interfaces between metal electrodes and GaN are required. Several 2D and 3D materials have been evaluated as Schottky gate electrodes in GaN HEMTs, such as Cu, [2,17] Pt, [7] Cr, [18] Pb, [17,19] Ir, [19] Mo, [20] ITO, [21,22] TaN, [23] TiN, [3] W, [24,25] WN or WC, [18] TiSi 2 , [11] Au [9] graphene, [10] MoS 2 , [26] and Ni. [27][28][29] However, the most extensively used gate electrode, Ni/Au bilayer film, is not CMOS-compatible.…”

Section: Introductionmentioning

confidence: 99%

Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Wang

Tyagi

et al. 2023

Advanced Materials

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Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3C2Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off‐state current (IOFF) of 10−7 mA mm−1, a record high ION/IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off‐state drain breakdown voltage of 1085 V, and a near‐ideal subthreshold swing of 61 mV dec−1. This work shows the great potential of MXene films as gate electrodes in wide‐bandgap semiconductor devices.

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“…For high-power and high-frequency applications, the Al-GaN/GaN heterostructure field-effect transistor (HFET) is regarded as an excellent candidate because of its high current density, high breakdown voltage and high saturation velocity performance. [1,2] But, the large access region between the gate and the source/drain in the conventional lithography process will restrict the current and the operation frequency due to the increase of access resistance. Ion implantation is a method that can effectively reduce the access resistance.…”

Section: Introductionmentioning

confidence: 99%

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Zhang

Wang

et al. 2016

Chinese Phys. B

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Self-aligned-gate heterostructure field-effect transistor (HFET) is fabricated using a wet-etching method. Titanium nitride (TiN) is one kind of thermal stable material which can be used as the gate electrode. A Ti/Au cap layer is fixed on the gate and acts as an etching mask. Then the T-shaped gate is automatically formed through over-etching the TiN layer in 30% H 2 O 2 solution at 95 • C. After treating the ohmic region with an inductively coupled plasma (ICP) method, an Al layer is sputtered as an ohmic electrode. The ohmic contact resistance is approximately 0.3 Ω•mm after annealing at a low-temperature of 575 • C in N 2 ambient for 1 min. The TiN gate leakage current is only 10 −8 A after the low-temperature ohmic process. The access region length of the self-aligned-gate (SAG) HFET was reduced from 2 µm to 0.3 µm compared with that of the gate-first HFET. The output current density and transconductance of the device which has the same gate length and width are also increased.

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Copper gate AlGaN/GaN HEMT with low gate leakage current

Cited by 70 publications

References 11 publications

Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors

Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors

Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

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Copper gate AlGaN/GaN HEMT with low gate leakage current

Cited by 70 publications

References 11 publications

Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors

Low resistance copper-based ohmic contact for AlGaN/GaN high electron mobility transistors

Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Self-aligned-gate AlGaN/GaN heterostructure field-effect transistor with titanium nitride gate

Contact Info

Product

Resources

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Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors