Copper high volume manufacturing R&amp;amp;D to production

Chylak, Bob; Clauberg, Horst; Foley, John; Qin, Ivy; Milton, Basil

doi:10.1109/eptc.2011.6184449

Cited by 8 publications

(4 citation statements)

References 1 publication

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“…Etching methods for visualizing intermetallic coverage in Cu and Pd-Cu ball bonds have been developed. A detailed etching recipe can be found in [9]. IMC between an Al pad and a Cu ball is very thin and cannot be easily observed optically for as bonded samples.…”

Section: Imc Measurementmentioning

confidence: 99%

“…Figure 7 shows a typical pad crack initiated by probing. A more detailed analysis of the dielectric crack for wire bonding can be found in [9].…”

Section: Cross Sectionmentioning

confidence: 99%

“…Exemplary factors influencing the Cu wire bonding portability is shown in Figure 9. A detailed description of how to best manage high volume Cu wire production can be found in [9].…”

Section: High Volume Cu Productionmentioning

confidence: 99%

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Ball Bond Process Optimization with Cu and Pd-Coated Cu Wire

et al. 2012

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Cu and Pd-coated Cu (PdCu) wire have been replacing Au wire in electronic packaging. The biggest reason for this transition is the high cost of gold. Methods for process characterization and optimization in Cu and Pd-coated Cu wire differ substantially from those typically used for Au wire. This paper will examine how modifications and newly developed metrology tools are used in the characterization of PdCu and Cu wire bonding. Shear strength, traditionally the most important measure of bond quality in Au wire bonding, is of only limited use in Cu wire bonding. Ball pull has become a much more useful measure of bond quality since it is a more direct measure of too little bonding (ball lifts) and too much bonding (pad peeling). Other important measurements for Cu wire bonding include measurement of Al pad splash and bonded ball cross-sectioning to inspect the ball pad interface and the remaining Al thickness. For Au bonding, the process recipe can be fairly easily optimized and transferred to another bonder. Process windows are much narrower in the Cu and PdCu 1st bond process. It is very critical to develop a robust process with an acceptable process window for Cu wire bonding and to have good control for equipment and material during production. Due to the high demand of process optimization, equipment repeatability, material and production control, collaborations between companies in the electronic packaging supply chain is important to ensure advances in Cu wire bonding technology.

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Section: Imc Measurementmentioning

confidence: 99%

“…Figure 7 shows a typical pad crack initiated by probing. A more detailed analysis of the dielectric crack for wire bonding can be found in [9].…”

Section: Cross Sectionmentioning

confidence: 99%

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Ball Bond Process Optimization with Cu and Pd-Coated Cu Wire

et al. 2012

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“…In addition, its hardness makes it difficult to form balls and necessitates high pressure during bonding, which can cause cracks in the pad [1]. However, Cu is easily oxidized upon exposure to air due to its low corrosion resistance [1,10,18,19]. Therefore, to increase its lifespan, it is often alloyed or coated with materials that have good corrosion resistance (such as Pd and Au) [1].…”

Section: Introductionmentioning

confidence: 99%

Influence of HCl Concentration on Corrosion Behavior between Au or Cu Bonding Wires and the Bond Pad for Semiconductor Packaging

Yoo,

Kim,

Jeon

et al. 2023

Materials

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Wire bonding, one of the methods for electrically connecting a semiconductor chip with a substrate, involves attaching thin metal wires to pads. It is the oldest electrical connection method that exhibits high compatibility with other processes. The metal wires used for electrical connection in wire bonding are mainly made of Au, Cu, and Ag. After the wire bonding, molding is performed using the epoxy molding compound (EMC). However, EMC inevitably contains ions such as halogen elements. In addition, it absorbs moisture due to its hydrophilicity, creating a corrosive environment with electrolytes. In this study, we evaluated the influence of hydrochloric acid concentration on corrosion behavior between Au or Cu bonding wires and sputtered Al bond pads. The electrochemical factors such as corrosion potential difference (ΔE), galvanic corrosion current density (ig), and anodic and cathodic Tafel slopes were found to influence galvanic corrosion behavior. Galvanic corrosion tendency in first bond and second bond areas of PCB unit specimen was confirmed.

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Pd-coated Cu wire bonding technology: Chip design, process optimization, production qualification and reliability test for high reliability semiconductor devices

Singh

Qin

et al. 2012

2012 IEEE 62nd Electronic Components and Technology Conference

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Copper high volume manufacturing R&D to production

Cited by 8 publications

References 1 publication

Ball Bond Process Optimization with Cu and Pd-Coated Cu Wire

Ball Bond Process Optimization with Cu and Pd-Coated Cu Wire

Influence of HCl Concentration on Corrosion Behavior between Au or Cu Bonding Wires and the Bond Pad for Semiconductor Packaging

Pd-coated Cu wire bonding technology: Chip design, process optimization, production qualification and reliability test for high reliability semiconductor devices

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