Copper-hydrogen complexes in silicon

Knack, S.; Weber, J.; Lemke, Heinz U.; Riemann, H.

doi:10.1103/physrevb.65.165203

Cited by 51 publications

(47 citation statements)

References 21 publications

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“…In other words, it has 'negative-U' and V +1 Si is energetically unstable. Only three levels are observed for substitutional copper Cu Si , corresponding to charge states +1, 0, −1, and −2 [5][6][7][8][9][10]. There is no experimental information about the defect's symmetry at present.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure calculations for substitutional copper and monovacancies in silicon

et al. 2006

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Two different computer program packages based on the self-consistent local-spin-density approximation- and -are employed in this study of substitutional copper Cu Si and monovacancies V Si in silicon, including the effects of their charge state. The programs differ in the types of basis sets and pseudopotentials they use, each with their own relative merits, while being similar in overall quality. This approach aims to reduce uncertainty in the results, particularly for small or subtle effects, where the risk is greatest that the conclusions are affected by artifacts specific to a particular implementation. The electronic structures of the two defects are closely related, hence they are expected to behave in a similar manner. For both defects structural distortions resulting in lower point group symmetries than T d (the highest possible) are found. This is in good agreement with the results of previous studies of V Si . Much less is known about symmetry-lowering effects for Cu Si ; however, the electronic levels of Cu Si have been measured accurately, while those for V Si are less accessible. Calculating them is a challenging task for theory. The strategy we adopt, based purely on comparing total energies of supercells in different charge states, with and without model defects, reproduces the three known levels for Cu Si reasonably well. Satisfactory results are also obtained for V Si , so far as can be judged for this more complex case.

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Section: Introductionmentioning

confidence: 99%

Electronic structure calculations for substitutional copper and monovacancies in silicon

et al. 2006

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“…81,[109][110][111] Cu, Ag, and Au neutral hydrides are thermodynamically unstable, but as is evident from Figure 5, the dihydride anions are stable relative to the metal and H 2 ; in addition, AuH 2 − is the most stable of these various hydrides, and has been detected by IR spectroscopy. 81 As with Cu and Ag, AuH 2 − can form by reaction of H or H 2 with ion-or photonexcited Au species which can be ejected from the surface by ion bombardment or by electrostatic repulsion from the electrons present in the metal lattice.…”

Section: Silver Etching/patterning In H 2 and Chmentioning

confidence: 99%

Chemical Etching and Patterning of Copper, Silver, and Gold Films at Low Temperatures

Choi

Hess

2014

ECS J. Solid State Sci. Technol.

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Copper, silver, and gold share unique properties that offer numerous application possibilities. For instance, low resistivity and high electromigration resistance make them attractive as interconnect layers in integrated circuits and microelectronic devices, while the optical properties of their nano-scale structures allow fabrication of plasmonic devices. Etching or patterning techniques are required in order to fabricate nano-structures, devices, and circuits. Although liquid or vapor phase techniques can be applied, plasma or glow discharge methods are typically invoked due to the need to generate anisotropic nanometer pattern sizes. Group 11 metals (Cu, Ag, and Au) form few volatile compounds at temperatures below 150 • C, which limits the approaches that can be used to perform etching/patterning. Halogenated plasmas are widely used to etch metal layers; however, the low volatility of Cu, Ag, and Au halides precludes low temperature processes. Group 11 metals form hydrides readily in plasmas containing hydrogen species. Despite the thermodynamic instability of these metal hydrides, they appear to form at low (below room) temperature and can be desorbed from the etching surface by ion-or photon-assisted processes. Similarly, methylated metal etch products can be generated with hydrocarbon etching plasmas. As a result, etch rates above 12 ± 1 nm/min can be achieved, even when polymer forming plasmas (e.g., methane or other hydrocarbons) are used for patterning. These simple subtractive plasma etching approaches offer significant advantages relative to other vapor phase or liquid techniques in the manufacture of nano-scale devices and circuits.

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“…Infact, several deep recombination centers in low-bandgap semiconductors manifested this behavior since the very beginning of the studies on limiting charge life-time centers (Wertheim, 1959). Particularly, in the last years an extensive thermal spectroscopy study revealed that this behavior is quite common for transition metals in semiconductors (Grillenberger, 2004;Knack et al, 2002;Sachse et al, 2000;Shiraishi et al, 1999;Yarykin et al, 1999). …”

Section: Dynamical Instability In Ionization-recombination Reactionsmentioning

confidence: 99%

“…This seemingly unlikely condition happens to be verified by several transition metal impurities in germanium, silicon, silicon carbide (Grillenberger, 2004;Knack et al, 2002;Sachse et al, 2000;Shiraishi et al, 1999;Wertheim, 1959;Yarykin et al, 1999), both in case of doubly and triply ionized centers. A treatment of photoconduction in semiconductor in which recombination is assured by multiply ionized centers can be found in ref.…”

Section: Bistability By Multiply Ionized Recombination Centersmentioning

confidence: 99%

“…For instance, for native EL2 centers in gallium arsenide, undoubtely one of the most studied (Delaye & Sugg, 1994;Lin et al, 2006;Sudzius et al, 1999;Vincent et al, 1982), R 1 = C 1p /C 1n (see section 5) is known to vary in the range 10 −3 − 1 from the ambient to cryogenic temperatures , the dependence of its recovery rate R 21 (having an activation energy of about 0.3 eV) on temperature is also reported, but the capture rates of the metastable level are only known to be much smaller than those of the ground level (Delaye & Sugg, 1994), without any indication on the value of their ratio. In comparison, the capture rates of muptiply charged recombination centers have been studied in more detail, and several transition metal impurities in silicon, germanium and silicon carbide have exhibited a favourable ratio of the higher level cross section to the lower level one (K 2 /K 1 > 1, see section 6) (Grillenberger, 2004;Knack et al, 2002;Sachse et al, 2000;Shiraishi et al, 1999;Wertheim, 1959;Yarykin et al, 1999). Here we present a study on a center which is likely the most deeply and the longest studied of these, namely Nickel in Germanium.…”

Section: One Example Of Possible Photoconductive Bistable Behavior Inmentioning

confidence: 99%

See 1 more Smart Citation

Bistable Photoconduction in Semiconductors

Lagomarsino¹

2011

Optoelectronic Devices and Properties

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Copper-hydrogen complexes in silicon

Cited by 51 publications

References 21 publications

Electronic structure calculations for substitutional copper and monovacancies in silicon

Electronic structure calculations for substitutional copper and monovacancies in silicon

Chemical Etching and Patterning of Copper, Silver, and Gold Films at Low Temperatures

Bistable Photoconduction in Semiconductors

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