Copper Indium Selenides and Related Materials for Photovoltaic Devices

Stanbery, B.J.

doi:10.1080/20014091104215

Cited by 309 publications

(226 citation statements)

References 154 publications

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“…Thin-film solar cells based on the chalcopyrite-structured compound semiconductor Cu(In,Ga)Se 2 (CIGS) as the absorber material have been under development for more than two decades because of their high efficiency, radiation hardness, long-term stable performance, and low production costs [1][2][3] . These solar cells can be fabricated with only little material consumption due to the favorable optical properties of the CIGS absorber layer, namely, a direct bandgap and a high absorption coefficient 1,2 .…”

Section: Introductionmentioning

confidence: 99%

Atom Probe Tomography Studies on the Cu(In,Ga)Se<sub>2</sub> Grain Boundaries

Cojocaru‐Mirédin

Schwarz

Choi

et al. 2013

JoVE

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Compared with the existent techniques, atom probe tomography is a unique technique able to chemically characterize the internal interfaces at the nanoscale and in three dimensions. Indeed, APT possesses high sensitivity (in the order of ppm) and high spatial resolution (sub nm).Considerable efforts were done here to prepare an APT tip which contains the desired grain boundary with a known structure. Indeed, sitespecific sample preparation using combined focused-ion-beam, electron backscatter diffraction, and transmission electron microscopy is presented in this work. This method allows selected grain boundaries with a known structure and location in Cu(In,Ga)Se 2 thin-films to be studied by atom probe tomography.Finally, we discuss the advantages and drawbacks of using the atom probe tomography technique to study the grain boundaries in Cu(In,Ga)Se 2 thin-film solar cells.

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Section: Introductionmentioning

confidence: 99%

Atom Probe Tomography Studies on the Cu(In,Ga)Se<sub>2</sub> Grain Boundaries

Cojocaru‐Mirédin

Schwarz

Choi

et al. 2013

JoVE

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“…Up to now, optimum results in terms of efficiency have been obtained by using a complex alloy Cu͑In,Ga͒͑S,Se͒ 2 as absorber layer, which renders efficiencies above 19%. 1 Nevertheless, a deeper understanding of the properties of this material and the film formation mechanisms is still necessary in order to improve the efficiency and competitiveness of chalcopyrite-based solar cell technologies.…”

Section: Introductionmentioning

confidence: 99%

Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis

Izquierdo-Roca

Pérez-Rodrı́guez

Romano‐Rodríguez

et al. 2007

Journal of Applied Physics

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This article reports a detailed Raman scattering and microstructural characterization of S-rich CuIn͑S,Se͒ 2 absorbers produced by electrodeposition of nanocrystalline CuInSe 2 precursors and subsequent reactive annealing under sulfurizing conditions. Surface and in-depth resolved Raman microprobe measurements have been correlated with the analysis of the layers by optical and scanning electron microscopy, x-ray diffraction, and in-depth Auger electron spectroscopy. This has allowed corroboration of the high crystalline quality of the sulfurized layers. The sulfurizing conditions used also lead to the formation of a relatively thick MoS 2 intermediate layer between the absorber and the Mo back contact. The analysis of the absorbers has also allowed identification of the presence of In-rich secondary phases, which are likely related to the coexistence in the electrodeposited precursors of ordered vacancy compound domains with the main chalcopyrite phase, in spite of the Cu-rich conditions used in the growth. This points out the higher complexity of the electrodeposition and sulfurization processes in relation to those based in vacuum deposition techniques.

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“…Entre outros calcogenetos metálicos, é um potencial candidato na substituição do silício, cujo custo dificulta a popularização do uso de energia solar na geração alternativa de energia elétrica de pequena escala. A escolha de materiais apropriados que substituam o silício com rendimento quântico competitivo, a otimização dos métodos preparativos e a redução de outros possíveis custos, além do emprego que o seleneto de cobre encontra em dispositivos eletrônicos e optoeletrônicos 1 , constituem vasta área de pesquisa 2 . No presente trabalho, as condições de obtenção de filmes de Cu 2-x Se foram investigadas com objetivo de obter filmes aderentes com espessura nominal superior a 2 μm.…”

Section: Introductionunclassified

“…Zhang et al 8 usaram-no em camadas fotoabsorventes de células solares. Por fim, seleneto de cobre é também um precursor na síntese do CuInSe 2 , que foi o primeiro material que despertou atenção na substituição do silício em dispositivos fotovoltaicos 2,9 . Compostos ternários, como CuInSe 2 , já foram empregados em células solares com 18% de eficiência 10,11 .…”

Section: Introductionunclassified

Obtenção de filmes espessos de seleneto de cobre sobre carbono vítreo, ouro, titânio e cobre

Rabelo¹,

Arantes²,

Bottecchia³

2007

Quím. Nova

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Recebido em 11/10/05; aceito em 31/5/06; publicado na web em 28/11/06 OBTAINING COPPER SELENIDE THICK FILMS ON VITREOUS CARBON, GOLD, TITANIUM AND COPPER. Copper selenide (berzelianite) films were prepared on the title substrates using the chemical bath deposition technique (CBD). Film composition was determined by energy dispersion of x-rays. The kinetics of film growth is parabolic and film adherence limits the film thickness. On titanium, copper selenide forms islands that do not completely cover the surface, unless the substrate is prepared with a tin oxide layer; film composition also depends on the titanium oxide layer. On vitreous carbon, CBD and mechanical immobilization techniques lead to films with similar resistances for the electron transfer across the film/substrate interface. On gold, composition studies revealed that film composition is always the same if the pH is in the range from 8 to 12, in contrast to films prepared by an ion-ion combination route. On copper, a new procedure for obtaining copper selenide films as thick as 5 μm has been developed.

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Copper Indium Selenides and Related Materials for Photovoltaic Devices

Cited by 309 publications

References 154 publications

Atom Probe Tomography Studies on the Cu(In,Ga)Se<sub>2</sub> Grain Boundaries

Atom Probe Tomography Studies on the Cu(In,Ga)Se<sub>2</sub> Grain Boundaries

Raman microprobe characterization of electrodeposited S-rich CuIn(S,Se)2 for photovoltaic applications: Microstructural analysis

Obtenção de filmes espessos de seleneto de cobre sobre carbono vítreo, ouro, titânio e cobre

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