“…Semiconducting metal sulfides, especially I–III–VI polysulfides, have many advantages, such as strong visible light absorption, narrow band gap, excellent conductivity, chemical stability, and light corrosion resistance. , Indium sulfide (In 2 S 3 ) is an n-type semiconductor with a band gap energy of 2.0–2.3 eV, high photosensitivity, and low toxicity, and it has been studied in a heterostructure with other semiconductors, including GCN, in a few reports. − The photochemical properties of indium sulfide can be enhanced by the introduction of silver, obtaining I–III–VI sulfides with a range of stoichiometry, from doping levels to AgIn 5 S 8 and AgInS 2 . − Silver indium sulfides (AIS) possess a narrower band gap energy (∼1.7 eV), which allows for a higher sunlight capture ability, favoring promising results in the research of photocatalytic degradation and hydrogen production by water splitting. − Heterojunction composites containing AIS were successfully proposed, for example, between AgInS 2 nanosheets and TiO 2 , exhibiting an enhanced absorption of visible light and a promoted separation of photoinduced charge carrier pairs in the system, or zero-dimensional AgInS 2 QDs loaded on two-dimensional MXene nanosheets to construct a Z-type heterojunction with excellent interfacial charge transfer capability . After all, in view of the shortcomings of GCN, it is of practical significance to build a composite system of AIS QDs and GCN and optimize its optoelectronic properties by taking advantage of the unique properties of QDs.…”