Copper interconnection integration and reliability

Hu, C.‐K.; Luther, B. M.; Kaufman, F. B.; Hummel, John P.; Uzoh, Cyprian; Pearson, D.J.

doi:10.1016/0040-6090(94)05807-5

Cited by 215 publications

(122 citation statements)

References 12 publications

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“…Photosensitive polyimides (PSPIs) have been generally used in the fields of packaging of microelectronic devices such as printed circuit board (PCB) and large scale integrated (LSI) circuits due to their excellent thermal stability, chemical resistivity and low dielectric constant [1][2][3][4]. In most PI patterning processes, polyimide precursor resin (polyamic acid) is patterned by photolithography, and it is cured at approximately 300 o C for the thermal imidization reaction [5,6].…”

Section: Introductionmentioning

confidence: 99%

A Study on Surface Modification of Soluble Block Copolymer Polyimide by UV Irradiation and Its Application to Electroless Plating

Park

Youn

Takagi

et al. 2013

J. Photopol. Sci. Technol.

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In this paper, the influence of UV irradiation on surface properties of soluble block copolymer polyimide (SBC-PI) was investigated. The changes of topological and chemical properties of SBC-PI were investigated through water droplets test, dynamic force microscope (DFM) measurement, and X-ray photoelectron spectroscopy (XPS) analysis. Analysis results revealed that the surface properties of UV-irradiated SBC-PI film were changes from hydrophobic to hydrophilic without the increase of surface roughness, as a result from the generation of hydrophilic group. Through subsequent Cu electroless plating on selectively modified SBC-PI film, it was also demonstrated that the amount of electroplated Cu could be controlled by varying UV irradiation dose.

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Section: Introductionmentioning

confidence: 99%

A Study on Surface Modification of Soluble Block Copolymer Polyimide by UV Irradiation and Its Application to Electroless Plating

Park

Youn

Takagi

et al. 2013

J. Photopol. Sci. Technol.

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“…It has been shown that co-deposits of Cu with small amount of other metals (such as Ag, Sn, Co, and Mg) can potentially mitigate both electro-and stress-migration. [4][5][6][7][8] However, the resistivity of the interconnect increases with the addition of foreign metals. The International Technology Roadmap of Semiconductors (ITRS) has set the resistivity criterion at ρ < 2.2 μ · cm, 9 only slightly above the bulk resistivity of pure copper at 1.68 μ · cm.…”

mentioning

confidence: 99%

Pulse-Plating of Copper-Silver Alloys for Interconnect Applications

Volov

Swanson

O'Brien

et al. 2012

J. Electrochem. Soc.

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The electrodeposition of Cu-Ag alloys was studied as a possible application for interconnect technology, where Cu-Ag alloys may be less susceptible to electromigration than Cu alone. The presence of chloride in state-of-the-art copper plating electrolytes limited the solubility of Ag. However, pulse-plating approach enabled a wide range of Cu-Ag alloy compositions at substantial chloride concentration levels. The deposition of Ag was driven by the displacement reactions between the metallic copper and ionic silver during the off-time. Measured alloy compositions were consistent with theoretical estimates at various electrolyte concentrations, electrode rotation speeds, pulse frequencies and duty cycles. However, organic additives decreased incorporation of Ag into the alloy. It was also discovered that CuSO 4 · 5H 2 O from a number of major chemical suppliers contained Ag as an impurity. The roughness of the films was significant when produced by pulsed plating, but was shown to be substantially reduced in the presence of a leveling agent. Additionally, the concentration of chloride in the electrolyte was shown to significantly affect surface quality of the deposited Cu-Ag thin films. With the continuing miniaturization of microelectronics, electromigration effects in copper interconnect systems are becoming a major factor in determining device lifetime and reliability.1-3 Accordingly, there is a need for interconnect materials with improved electromigration resistance, while maintaining adequate electrical resistivity. It has been shown that co-deposits of Cu with small amount of other metals (such as Ag, Sn, Co, and Mg) can potentially mitigate both electro-and stress-migration.4-8 However, the resistivity of the interconnect increases with the addition of foreign metals. The International Technology Roadmap of Semiconductors (ITRS) has set the resistivity criterion at ρ < 2.2 μ · cm, 9 only slightly above the bulk resistivity of pure copper at 1.68 μ · cm. Alloying copper with silver (ρ Ag = 1.59 μ · cm) was shown to increase the resistivity of electrochemically deposited Cu-Ag films the least when compared to other copper alloys.10 For Ag content between 0.17 and 3.2 wt% the resistivity ranges 1.8 to 3.1 μ · cm.10 For this reason Cu-Ag alloys, especially at the lower Ag weight percentages, are potential candidates for the fabrication of interconnects in microelectronic devices.Acidic copper-sulfate electrolytes containing chloride have been successfully applied for many years to the electrochemical fabrication of copper interconnects. [11][12][13] Chloride in these electrolytes is known to be one of the critical constituents enabling defect-free filling of surface features.14-20 The main challenge for depositing silver from copper-plating electrolytes, which contain about 50 ppm of chloride, is the low solubility of silver in the presence of chloride ions (the solubility product of AgCl in water at 25• C is 1.8×10 We demonstrate that the application of a pulsating current instead of a direct current permits ...

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“…is another important factor [12][13][14][15][16][17][18][19]. Indeed, the change of interconnects from Al to Cu in the development of integrated circuit industry is partly because of the electromigration [20][21][22].…”

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confidence: 99%

Current sustainability and electromigration of Pd, Sc and Y thin-films as potential interconnects

Yang

Xie

et al. 2010

Nano-Micro Lett

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The progress on novel interconnects for carbon nanotube (CNT)-based electronic circuit is by far behind the remarkable development of CNT-field effect transistors. The Cu interconnect material used in current integrated circuits seems not applicable for the novel interconnects, as it requires electrochemical deposition followed by chemical-mechanical polishing. We report our experimental results on the failure current density, resistivity, electromigration effect and failure mechanism of patterned stripes of Pd, Sc and Y thin-films, regarding them as the potential novel interconnects. The Pd stripes have a failure current density of (8a10)×10 6 A/cm 2 (MA/cm 2 ), and they are stable when the working current density is as much as 90% of the failure current density. However, they show a resistivity around 210 μΩ·cm, which is 20 times of the bulk value and leaving room for improvement. Theoretically it is predicted that multi-walled CNT (MWCNT) could be a good candidate as interconnect for novel nanoelectronics [6][7][8]. Because MWCNTs are chemically and thermally stable and can sustain an extremely high working current density. But in practice, conventional lithography and thin-film technologies are not applicable for the MWCNTs, and it is hard to manipulate and/or grow MWCNTs with desired length and diameter to the target positions in a circuit, therefore to date only a few demonstrations have been reported that MWCNTs can be used as part of the interconnects in a prototype electronic circuit [9][10][11].

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Copper interconnection integration and reliability

Cited by 215 publications

References 12 publications

A Study on Surface Modification of Soluble Block Copolymer Polyimide by UV Irradiation and Its Application to Electroless Plating

A Study on Surface Modification of Soluble Block Copolymer Polyimide by UV Irradiation and Its Application to Electroless Plating

Pulse-Plating of Copper-Silver Alloys for Interconnect Applications

Current sustainability and electromigration of Pd, Sc and Y thin-films as potential interconnects

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