2008
DOI: 10.1016/j.tsf.2007.10.011
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Copper ion diffusion in porous and nonporous SiO2-based dielectrics using bias thermal stress and thermal stress tests

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Cited by 63 publications
(33 citation statements)
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“…However, there are many reports that suggest that the inter-diffusion between Cu and a-IGZO deteriorate the electrical performance [6,7,8]. Meanwhile, pure Cu films exhibit poor adhesion to many substrates, such as glass and SiO2 [9,10,11]. Some papers use a barrier layer such as Ta, Ti, and Mo to prevent copper diffusing into IGZO and enhance the adhesion strength [12,13,14].…”
Section: Introductionmentioning
confidence: 99%
“…However, there are many reports that suggest that the inter-diffusion between Cu and a-IGZO deteriorate the electrical performance [6,7,8]. Meanwhile, pure Cu films exhibit poor adhesion to many substrates, such as glass and SiO2 [9,10,11]. Some papers use a barrier layer such as Ta, Ti, and Mo to prevent copper diffusing into IGZO and enhance the adhesion strength [12,13,14].…”
Section: Introductionmentioning
confidence: 99%
“…More recent experimental work reveals different activation-energy values lying between E A = 0.71 and 1.02 eV, and these values depend on sample preparation and microstructure. For example, the activation energy increases with increasing density of SiO 2 [12].…”
Section: Introductionmentioning
confidence: 99%
“…In the past, C-V and leakage current measurements have often been utilized to study the penetration kinetics under a common assumption that the metal ions would pile up at the dielectric/Si interface once they drift into the dielectric. 6,7 However, this assumption is not always consistent with the published metal distribution results. 8,9 In this paper, we present a study of the kinetics of Ta ion penetration in porous low-k dielectrics.…”
mentioning
confidence: 81%