Copper migration in cdte heterojunction solar cells

Chou, H. C.; Rohatgi, A.; Jokerst, N.M.; Thomas, Edward; Kamra, S.

doi:10.1007/bf02659909

Cited by 70 publications

(32 citation statements)

References 12 publications

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“…This is, at least partially, in disagreement with the commonly accepted assumption that Cu diffusion along GBs should be easier. 14,15 Our measurements support that Cu is not activated as an acceptor at grain boundaries even though GB Cu diffusion could be preferential. These conclusions are suitable for standard high-efficiency thin-film CdTe solar cells of reasonable stability.…”

Section: Cathodoluminescence Of Cu Diffusion In Cdte Thin Films For Csupporting

confidence: 74%

Cathodoluminescence of Cu diffusion in CdTe thin films for CdTe/CdS solar cells

Romero

Albin

Al‐Jassim

et al. 2002

Applied Physics Letters

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Section: Cathodoluminescence Of Cu Diffusion In Cdte Thin Films For Csupporting

confidence: 74%

Cathodoluminescence of Cu diffusion in CdTe thin films for CdTe/CdS solar cells

Romero

Albin

Al‐Jassim

et al. 2002

Applied Physics Letters

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“…However, Cu is also known to be a fast diffuser in most materials and will diffuse even more quickly along the polycrystalline grain boundaries. For these reasons, Cucontaining contacts have been associated with various types of instability in CdTe devices (8). In the following study, SIMS is used to assess variations in Cu concentration in the ZnTe and CdTe layers.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Cu diffusion in ZnTe-based contacts for thin-film CdS/CdTe solar cells

Narayanswamy

Gessert

Asher

1999

AIP Conference Proceedings

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Abstract. Ohmic contacts to thin-film CdS/CdTe photovoltaic devices have been formed using a two-layer contact interface of undoped ZnTe (ZnTe) and Cu-doped ZnTe (ZnTe:Cu), followed by Ni or Ti as an outer metallization. Secondary ion mass spectroscopy (SIMS) is used to study Cu diffusion within this back-contact structure, and also, to monitor Cu diffusion from the contact into the CdTe. When Ni metallization is used, the ZnTe:Cu layer becomes increasingly depleted of Cu, and Ni diffusion into the ZnTe:Cu increases as the contact deposition temperature increases from 100°C to 300°C. Cu depletion is not observed when Ni is replaced with Ti. Diffusion of Cu from the ZnTe:Cu layer into the ZnTe layer also increases with contact deposition temperature, and produces a buildup of Cu at the ZnTe/CdTe interface. High-mass resolution SIMS indicates that, although Cu levels in the CdTe remain low, Cu diffusion from the contact proceeds into the CdTe layer and toward the CdTe/CdS junction region.

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“…It was shown, although indirectly, that concentration of the ternary phase and the S content is higher in the GB regions. The evidence of rapid diffusion of Cu in polycrystalline CdTe due to GB was clearly demonstrated in [15]. Probably the rates of electromigration, which is well manifested for Cu in CdTe are also different for the bulk material and the GB regions.…”

Section: Discussionmentioning

confidence: 92%

Process Development and Basic Studies of Electrochemically Deposited CdTe-Based Solar Cells; Annual Technical Report, Phase II, 16 May 1999-13 May 2000

Kaydanov¹,

Ohno

2001

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Copper migration in cdte heterojunction solar cells

Cited by 70 publications

References 12 publications

Cathodoluminescence of Cu diffusion in CdTe thin films for CdTe/CdS solar cells

Cathodoluminescence of Cu diffusion in CdTe thin films for CdTe/CdS solar cells

Analysis of Cu diffusion in ZnTe-based contacts for thin-film CdS/CdTe solar cells

Process Development and Basic Studies of Electrochemically Deposited CdTe-Based Solar Cells; Annual Technical Report, Phase II, 16 May 1999-13 May 2000

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