Copper nucleation by chemical vapour deposition on organosilane treated SiO2 surfaces

Semaltianos, N. G.; Pastol, J.-L.; Doppelt, P.

doi:10.1016/j.susc.2004.05.136

Cited by 16 publications

(10 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a result, the coalescence was obtained by the formation of some “new” nuclei in the gaps. In other words, the coalescence was achieved through a “filling in” of the gaps by new formed nuclei [ 15 ]. As shown in Table 1 , although the initial copper deposition on TES-SAMs modified surface was more difficult, the deposition rate became remarkably increasing on the secondary phase for its density and crystal growth.…”

Section: Resultsmentioning

confidence: 99%

Comparative Study of Electroless Copper Film on Different Self-Assembled Monolayers Modified ABS Substrate

Fan

Wang

et al. 2014

IJMS

View full text Add to dashboard Cite

Copper films were grown on (3-Mercaptopropyl)trimethoxysilane (MPTMS), (3-Aminopropyl)triethoxysilane (APTES) and 6-(3-(triethoxysilyl)propylamino)-1,3,5- triazine-2,4-dithiol monosodium (TES) self-assembled monolayers (SAMs) modified acrylonitrile-butadiene-styrene (ABS) substrate via electroless copper plating. The copper films were examined using scanning electron microscopy (SEM) and X-ray diffraction (XRD). Their individual deposition rate and contact angle were also investigated to compare the properties of SAMs and electroless copper films. The results indicated that the formation of copper nuclei on the TES-SAMs modified ABS substrate was faster than those on the MPTMS-SAMs and APTES-SAMs modified ABS substrate. SEM images revealed that the copper film on TES-SAM modified ABS substrate was smooth and uniform, and the density of copper nuclei was much higher. Compared with that of TES-SAMs modified resin, the coverage of copper nuclei on MPTMS and APTES modified ABS substrate was very limited and the copper particle size was too big. The adhesion property test demonstrated that all the SAMs enhanced the interfacial interaction between copper plating and ABS substrate. XRD analysis showed that the copper film deposited on SAM-modified ABS substrate had a structure with Cu(111) preferred orientation, and the copper film deposited on TES-SAMs modified ABS substrate is better than that deposited on MPTMS-SAMs or APTES-SAMs modified ABS resins in electromigrtion resistance.

show abstract

Section: Resultsmentioning

confidence: 99%

Comparative Study of Electroless Copper Film on Different Self-Assembled Monolayers Modified ABS Substrate

Fan

Wang

et al. 2014

IJMS

View full text Add to dashboard Cite

show abstract

“…In the case of silane SAMs on SiO 2 , top deposition of metallic Cu has been reported for substrate temperatures >150 C, as confirmed by XPS, X-ray diffraction, and SEM [84,85]. The surface functionality apparently changes the activation energy of nucleation; ÀSO 3 H appears to show the lowest activation energy, likely due to protonation of ligands leading to more rapid nucleation of Cu [86].…”

Section: Cumentioning

confidence: 82%

Issues and Challenges in Vapor-Deposited Top Metal Contacts for Molecule-Based Electronic Devices

Maitani

2011

Unimolecular and Supramolecular Electronics I

View full text Add to dashboard Cite

Metal vapor deposition to form ohmic contacts is commonly used in the fabrication of organic electronic devices because of significant manufacturability advantages. In the case of single molecular layer devices, however, the extremely small thickness, typically ~1-2nm, presents serious challenges in achieving good contacts and device integrity. This review focuses on recent scientific aspects of metal vapor deposition on monolayer thickness molecular films, particularly self-assembled monolayers, ranging across mechanisms of metal nucleation, metal-molecular group interactions and chemical reactions, diffusion of metal atoms within and through organic films, and the correlations of these and other factors with device function. Results for both non-reactive and reactive metal deposition are reviewed. Finally, novel strategies are considered which show promise for providing highly reliable and durable metal/organic top contacts for use in metal-molecule-metal junctions for device applications.

show abstract

“…This may be due to the deposition occurring within the two temperature regimes of CVD. [7] According to Figure 1, in the low temperature region below 330°C, the CVD process is within the surface reaction-controlled regime. Because of the low substrate temperature, the precursor molecules which arrive onto the substrate surface do not decompose and deposit immediately, but there is a finite time during which the molecules travel on the surface by diffusion before decomposing.…”

Section: Evolution Of Surface Morphologymentioning

confidence: 99%

“…They proposed that, due to its superior barrier property at the near-zero thickness, SAMs should be preferred over the traditional diffusion barriers of Ta, TaN, and TiN deposited onto Si/SiO 2 by conventional vapor deposition techniques. Semaltianos et al [7,8] investigated the CVD-produced Cu nucleation on SAMs deposited by the gas-phase silylation method. The study of copper nucleation indicates a higher affinity for copper CVD on the SAM-modified substrate surface than on the TiN substrate surface used previously.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of Chemical Vapor Deposited Copper Films on Mercaptan Self-Assembled Monolayer Diffusion Barriers

Liu

Wang

2006

Chem. Vap. Deposition

View full text Add to dashboard Cite

Copper thin films are produced by CVD using the precursor Cu II bis-hexafluoroacetylacetonate [Cu II (hfac) 2 ], on the self-assembled monolayers of a 3-mercaptopropyltrimethoxysilane (MPTMS) modified substrate. The microstructures of the deposited copper films are characterized by various surface analysis techniques, such as scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The film resistivity was also measured using the fourprobe method. The results of the measurements indicate that the microstructures of copper thin film are strongly dependent on the substrate temperature during film deposition. The copper thin films deposited have a resistivity as low as 2.1 lX cm in the temperature range 290-350°C. These results indicate that the CVD of copper film on a mercaptan SAM diffusion barrier is a potential technique for copper multilevel metallization.

show abstract

Copper nucleation by chemical vapour deposition on organosilane treated SiO2 surfaces

Cited by 16 publications

References 15 publications

Comparative Study of Electroless Copper Film on Different Self-Assembled Monolayers Modified ABS Substrate

Comparative Study of Electroless Copper Film on Different Self-Assembled Monolayers Modified ABS Substrate

Issues and Challenges in Vapor-Deposited Top Metal Contacts for Molecule-Based Electronic Devices

Characterization of Chemical Vapor Deposited Copper Films on Mercaptan Self-Assembled Monolayer Diffusion Barriers

Contact Info

Product

Resources

About