2012
DOI: 10.1016/j.ijhydene.2012.02.049
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Copper oxide photocathodes prepared by a solution based process

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Cited by 95 publications
(74 citation statements)
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“…Previous report on CuO nanoparticles has shown the possibility of bandgap narrowing as a result of heat-treatment. 64 However, the optical analysis of our nanocrystalline CuO thin film showed that the bandgap shifts merely from 1.57 to 1.47 eV by the process of annealing. The estimated span of built in electric field by the aforementioned consideration in nanocrystalline CuO film having N A = 10 16 cm −3 is 1.9 μm.…”
Section: Resultsmentioning
confidence: 74%
“…Previous report on CuO nanoparticles has shown the possibility of bandgap narrowing as a result of heat-treatment. 64 However, the optical analysis of our nanocrystalline CuO thin film showed that the bandgap shifts merely from 1.57 to 1.47 eV by the process of annealing. The estimated span of built in electric field by the aforementioned consideration in nanocrystalline CuO film having N A = 10 16 cm −3 is 1.9 μm.…”
Section: Resultsmentioning
confidence: 74%
“…The preparation conditions that were applied in the spinning disk reactor were a rotational speed of 4000 rpm, CuSO 4 and Na 2 CO 3 concentrations of 0.10 M, and a flow rate of 1.5 L/min. The high rate of production herein was achieved because the process was carried out in continuous mode -unlike the precipitation method in batch mode [4,5,7,8]. Additionally, the rate of production of CuO nanoparticle was increased by increasing the flow rate.…”
Section: Resultsmentioning
confidence: 99%
“…These nanostructures have been widely examined owing to their promising applications in various fields [1]. Among these nanostructures, CuO nanoparticles have emerged as potentially useful in various technological applications such as nanofluids [2], solar cells [3], hydrogen generation [4,5], gas sensing [6,7], catalysis [7,8], photocatalytic degradation [9], and antimicrobial applications [10].…”
Section: Introductionmentioning
confidence: 99%
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“…[1,10] From the results, the conduction-band-edge position was calculated as À1.48 V versus RHE. [8,[31][32][33] In comparison to other p-type semiconductors reported for CO 2 reduction, the conduction-band edge of ZnTe is located at the most negative energy, at À1.63 V (À1.48 V, experimental), followed by those of ZnSe and GaP at À1.34 and À1.14 V, respectively. [6,7] The obtained flat-band potential could have been affected by many factors, including the surface composition, the termination and concentration of trap states, and coupling with ZnO.…”
Section: Angewandte Chemiementioning
confidence: 87%