2019
DOI: 10.1016/j.apsusc.2019.01.289
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Copper sulfide nanoparticles as hole-transporting-material in a fully-inorganic blocking layers n-i-p perovskite solar cells: Application and working insights

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Cited by 53 publications
(40 citation statements)
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“…The cost accounting of the device showed that the use of CuS was 23 times cheaper than the use of Spiro-OMeTAD. [118] To overcome the severe degradation problem of Spiro-OMeTAD, Lei et al fabricated a Spiro-OMeTAD/CuS double-layer HTM (Figure 8d). [117] Copyright 2018, American Chemical Society.…”
Section: Inorganic Chalcogen Compound Htmsmentioning
confidence: 99%
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“…The cost accounting of the device showed that the use of CuS was 23 times cheaper than the use of Spiro-OMeTAD. [118] To overcome the severe degradation problem of Spiro-OMeTAD, Lei et al fabricated a Spiro-OMeTAD/CuS double-layer HTM (Figure 8d). [117] Copyright 2018, American Chemical Society.…”
Section: Inorganic Chalcogen Compound Htmsmentioning
confidence: 99%
“…The cost accounting of the device showed that the use of CuS was 23 times cheaper than the use of Spiro‐OMeTAD. [ 118 ] To overcome the severe degradation problem of Spiro‐OMeTAD, Lei et al fabricated a Spiro‐OMeTAD/CuS double‐layer HTM (Figure 8d). The high intrinsic mobility of CuS could enhance hole transport and reduce charge recombination, yielding a high PCE of 18.58%.…”
Section: Chalcogen Compound Htmsmentioning
confidence: 99%
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“…Tirado et al 116 have proceeded to the synthesis and characterization of p-type Cu sulfide nanoparticles that have been applied as a low-cost, fully inorganic HTM in mesoscopic n-i-p PSCs. By employing CuS combined with two different perovskites, CH 3 NH 3 PbI 3 (MAPbI 3 ) and (FAPbI 3 ) 0.78 (MAPbBr 3 ) 0.14 (CsPbI 3 ) 0.08 (CsFAMAPbIBr), very high current densities and fill-factors were observed, suggesting an effective hole-extraction at the CuS interface, which has led to a PCE close to 14%.…”
Section: Sulfides (Cus)mentioning
confidence: 99%
“…Tirado et al used CuS in normal device architecture (n-i-p) as a top HTL. [14] Han et al and Lei et al used Cu 1.8 S and Cu 1.75 S, respectively, in conjunction with Spiro-OMeTAD (2,2′,7,7′-tetrakis(N,N-di-p-methoxyphenyl-amine)9,9′spirobifluorene) to improve the charge transfer through the HTL in normal device architecture PSC. [15] Rao et al used a very little amount of CuS nanoparticles for modifying the valence band maximum (VBM) position of indium tin oxide.…”
Section: Introductionmentioning
confidence: 99%