Copper wire interconnect reliability evaluation using in-situ High Temperature Storage Life (HTSL) tests

Mavinkurve, A.; Goumans, L.; O'Halloran, G.M.; Rongen, R.T.H.; Farrugia, Mark Luke

doi:10.1016/j.microrel.2014.07.026

Cited by 12 publications

(4 citation statements)

References 8 publications

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“…Traditionally, high-temperature aging is employed in the reliability investigations of Au-Al bonding, followed by the shear stress test, tensile test, and microscopic characterization by Energy Dispersive X-ray Spectroscopy (EDX) and Scanning Electron Microscope (SEM), but these have limitations in examining the various stages of the aging process. Moreover, current aging tests employing resistance measurements with ball on ball contact may not accurately reflect the reliability of wire bonding under electromigration conditions, as reliability of this model cannot be guaranteed [ 17 ]. To address these issues, a novel structure utilizing the Kelvin Four-terminal sensing resistance approach has been designed to enable precise measurement in this study.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method

Gao

Zhou

et al. 2023

Micromachines

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The ongoing trend towards miniaturization and increased packaging density has exacerbated the reliability problem of Au-Al heterogeneous metal bonding structures in high-temperature environments, where extreme temperatures and high current pose a serious challenge. In order to address this issue, the present study aims to investigate the electromigration reliability of Au-Al bonding by comparing the conventional heterogeneous contacts with OPM structures, which are homogeneous contacts. A novel bonding layout was developed to precisely detect the resistance and obtain stage changes in electromigration. The experimental results demonstrated that the relative resistance shift of Au-Al bonding at 250 °C was 98.7%, while CrAu and NiPdAu OPM structures exhibited only 46.1% and 2.93% shifts, which suggests that the reliability of OPM structures was improved by a factor of 2.14 and 33.6, respectively. The degradation of Au-Al bonding was attributed to the large cracks observed at the bonding interface and lateral consumption of Al elements. In contrast, OPM structures only exhibited tiny voids and maintained a better bonding state overall, indicating that homogeneous metal contacts have better immunity to electromigration. Furthermore, this study also observed the polarity effect of electromigration and analyzed the impact of NiPdAu thickness on reliability. Overall, this research provides a novel approach and an insightful theoretical reference for addressing the bottleneck of high-temperature electromigration reliability in high-temperature sensor packaging.

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Section: Introductionmentioning

confidence: 99%

Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method

Gao

Zhou

et al. 2023

Micromachines

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“…One of such methods is based on contact resistance (R C ) [5], [8], [9], [14]- [17], where double bonds are used in a four-wire probe configuration (Kelvin sensing) to capture the resistance of the bond interface. There is a potential problem with these R C measurements.…”

Section: Introductionmentioning

confidence: 99%

A Study on Measuring Contact Resistance of Ball Bonds on Thin Metallization

Laor

Herrell

Mayer

2015

IEEE Trans. Compon., Packag. Manufact. Technol.

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Contact resistance measurement configurations for the evaluation of ball bond reliability on thin metallizations are studied. Samples with symmetrical and asymmetrical four-wire probe configurations are analyzed and compared with a calibrated finite-element model. It is found that the measured contact resistance strongly depends on the geometric placement of the probe wires, and the value closest to the true value is obtained from a probe placement that is opposite and away from high-current-density regions on the metallization. Probes should also be placed as close as possible to the contact interface. Sheet resistance components contributed by intermediate thin metallizations are of the same order of magnitude as the unaged reported R C . Therefore, they are considered. Symmetrical current distributions yield a more homogeneous potential drop across the bond interface being probed, but also capture a larger component of metallization sheet resistance. Experimental samples were aged, and the contact resistance increase was measured. The impacts of various probe placements on the sensed R C were studied.

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“…The increase in resistance leads to heat generation as current flows, promoting additional IMC formation. IMC growth also leads to formation of cracks [80,81], voids [82] and are susceptible to corrosion [83], affecting the wire bond reliability. Typical stress conditions according to the JEDEC standard JESD47 [48] for stress driven qualification of integrated circuits is at 150…”

Section: High Temperature Storage Lifementioning

confidence: 99%

Reliability study of copper wire bonding and through silicon via

Chan¹

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Copper wire interconnect reliability evaluation using in-situ High Temperature Storage Life (HTSL) tests

Cited by 12 publications

References 8 publications

Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method

Analysis of Degradation of Electromigration Reliability of Au-Al and OPM Wire Bonded Contacts at 250 °C Using Resistance Monitoring Method

A Study on Measuring Contact Resistance of Ball Bonds on Thin Metallization

Reliability study of copper wire bonding and through silicon via

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