2013
DOI: 10.1016/j.commatsci.2013.05.055
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Core element effects on dislocation nucleation in 3C–SiC: Reaction pathway analysis

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Cited by 11 publications
(15 citation statements)
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“…As estimated in this study, the local equilibrium concentration of Y at the surface is approximately C eq s = 46% when the concentration of bulk is assumed to be C b = 18.2% (10YSZ). Under this equilibrium condition, our MD results predict that the oxygen diffusion coefficients at 46 atom% Y-segregated surface (D oxy s, 46 ) is approximately equal to that at 18.2 atom% YSZ bulk (D oxy b,18.2 ). In addition, as shown in Fig.…”
Section: Oxygen Diffusion At Surfacementioning
confidence: 80%
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“…As estimated in this study, the local equilibrium concentration of Y at the surface is approximately C eq s = 46% when the concentration of bulk is assumed to be C b = 18.2% (10YSZ). Under this equilibrium condition, our MD results predict that the oxygen diffusion coefficients at 46 atom% Y-segregated surface (D oxy s, 46 ) is approximately equal to that at 18.2 atom% YSZ bulk (D oxy b,18.2 ). In addition, as shown in Fig.…”
Section: Oxygen Diffusion At Surfacementioning
confidence: 80%
“…The intermediate images are provided by connecting the two endpoints by linear interpolation. The convergence is determined when the potential force on each replica vertical to the path becomes less than 1.0 × 10 −5 eV/Å [45,46]. The activation energies E i→j for cation hopping from the ith layer to the jth layer have been computed for the top six layers denoted as i(= 1, .…”
Section: Cation Defect Migration Energymentioning
confidence: 99%
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“…Increase of defect atoms occurs almost at the same time in each sub-lattice, but, after the pop-in (d > 3.06 nm), the number of defects atom of C is more than the number of defects atom of Si. This difference is caused by the fact that the dislocation core is different in Si and C [13]. Nevertheless, both distribution of defect atoms (those shown in Fig.…”
Section: Structure Analysis By Cnamentioning
confidence: 96%
“…Therefore, atomic simulation with more atoms based on empirical potential is needed. Sun et al (2013) showed that the Si-core dislocation has lower activation energy and may result in athermal strains during glide-set partial nucleation from sharp corners. This conclusion agrees with the previously-mentioned experimental data.…”
Section: Introductionmentioning
confidence: 99%