Core-level photoemission investigation of atomic-fluorine adsorption on GaAs(110)

Ab, McLean; Terminello, L. J.; Fr, McFeely

doi:10.1103/physrevb.40.11778

Cited by 28 publications

(21 citation statements)

References 24 publications

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“…After large exposures, the Fermi level is pinned ∼ 0.5 eV above the VBM, independent of doping. Similar effects are seen for both XeF 2 reacted with GaAs(110) and Cl 2 reacted with InAs(110), where, following sufficiently large exposures, the Fermi level is pinned ∼ 0.5 eV above the VBM, independent of doping (111,112). In several of the studies, this behavior was explained in terms of adsorbate-induced virtual gap states (ViGSs) (102,109,110,112).…”

Section: Valence Bandsmentioning

confidence: 55%

“…Other (001) reconstructions, such as c(4 × 4) or c(2 × 8), can be grown using molecular beam epitaxy (MBE) (82,83). The polar (111) surface is also either group-III or group-V terminated. Both (2 × 2) and ( √ 19 × √ 19) reconstructions have been observed for clean GaAs(111), depending on the surface composition (84).…”

Section: Geometric Structurementioning

confidence: 99%

“…The reaction of XeF 2 with GaAs has been followed over a range of exposures and temperatures by using SXPS measurements (106)(107)(108)111) and a combination of Auger electron spectroscopy (AES) and high-resolution electron energy loss spectroscopy (HREELS) (130) measurements. XeF 2 is an excellent source of atomic F, as it readily dissociates on a GaAs surface, thereby liberating F atoms without incorporating any Xe into the surface.…”

Section: Fluorinementioning

confidence: 99%

“…These lone F atoms are highly reactive. Initially, they simply chemisorb on the surface, forming Ga and As monofluorides (108,111,130). With sufficient disruption of the surface, however, there is a transition from chemisorption to etching (111,130).…”

Section: Fluorinementioning

confidence: 99%

“…The interface between the film and substrate is ∼ 5Å thick and consists of the intermediate reaction products: GaF, AsF, and/or As x , along with tricoordinate Ga and As defects (106)(107)(108)111). Figure 4 shows typical SXPS spectra of the Ga and As 3d core levels for a moderately fluorinated GaAs surface, with the contributions from each of these species indicated.…”

Section: Fluorinementioning

confidence: 99%

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Fundamental Studies of Halogen Reactions With Iii-v Semiconductor Surfaces

Simpson

Yarmoff

1996

Annu. Rev. Phys. Chem.

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It is technologically important to understand how halogens react with semiconductor surfaces because halogen compounds are commonly used to etch semiconductor wafers in the microelectronics industry. Halogens are also model adsorbates for studying chemisorption on covalently bonded materials, such as semiconductors, owing to the simple nature of the bonds that they form. The growing use of III-V materials in the manufacture of optoelectronic devices has prompted investigations of the reactions of molecular halogens (XeF 2 , Cl 2 , Br 2 , and I 2 ) with III-V semiconductor surfaces (GaAs, GaSb, InP, InAs, and InSb). This review examines the more fundamental of these investigations, which involve model systems in ultra-high vacuum, focusing on the chemistry of the halogen surface reactions and the physical and electronic structure of the reacted surfaces.

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