2019
DOI: 10.1039/c9ee90017a
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Correction: Boosting the solar water oxidation performance of a BiVO4 photoanode by crystallographic orientation control

Abstract: Correction for ‘Boosting the solar water oxidation performance of a BiVO4 photoanode by crystallographic orientation control’ by Hyun Soo Han et al., Energy Environ. Sci., 2018, 11, 1299–1306.

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Cited by 6 publications
(2 citation statements)
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“…The Mo:BiVO 4 photoanode used here revealed good performance (≈6.4 mA cm −2 at 1.23 V RHE and an onset potential of 0.2 V RHE in a K‐Bi buffer solution with a pH of 9.0) as a top light absorber. [ 38,39 ] To achieve high efficiency, further optimization of the electrolyte was performed for the tandem cell containing two photoelectrodes involving opposite reactions. We tested various concentrations of borate buffer (0.1–1.0 m ) to investigate its effect on both photoelectrodes (Figure S19, Supporting Information).…”
Section: Resultsmentioning
confidence: 99%
“…The Mo:BiVO 4 photoanode used here revealed good performance (≈6.4 mA cm −2 at 1.23 V RHE and an onset potential of 0.2 V RHE in a K‐Bi buffer solution with a pH of 9.0) as a top light absorber. [ 38,39 ] To achieve high efficiency, further optimization of the electrolyte was performed for the tandem cell containing two photoelectrodes involving opposite reactions. We tested various concentrations of borate buffer (0.1–1.0 m ) to investigate its effect on both photoelectrodes (Figure S19, Supporting Information).…”
Section: Resultsmentioning
confidence: 99%
“…Grain structures in the nonepitaxial polycrystalline films are complicated and variable, while the epitaxial films usually have definite structures and are beneficial for fundamental investigation . In addition, the physical and chemical properties of some certain materials, such as electrical/magnetic anisotropic behavior and catalytic activity, were found to depend strongly on the crystallographic orientation. When serving as the intermediate conducting templates for a specific oriented active layer (such as photovoltaic BiVO 4 , and ferroelectric HfO 2 ) in advanced devices, the ITO film itself has to be epitaxial. Therefore, although nonepitaxial ITO films already possess excellent photoelectric properties, it is still of great significance to study the epitaxial growth and the corresponding properties of the ITO films.…”
Section: Introductionmentioning
confidence: 99%