Correction: Huang et al. High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots. Nanomaterials 2021, 11, 2696

Micro-LED is a new technology applied in the display field, which has the advantages of self-illumination, low power consumption, high brightness, long life and ultra-high resolution, and has broad application prospects. Using MOS devices to drive micro-LED can enable each unit to have its own drive, thus improving the yield and reducing the subsequent repair processes. In this paper, Sentaurus TCAD simulation software is used to design and simulate NMOS/PMOS devices and their driving circuits. For the first time, CMOS inverters are used to directly drive Micro-LED. Three kinds of driving circuits are compared and analyzed according to their simulation results in output characteristics and transient characteristics. In terms of switching characteristics caused by output characteristics, a CMOS inverter driving a micro-LED circuit has no problems of incomplete turn-off and has greater advantages. In the switching characteristics aspect caused by transient characteristics, PMOS driving a micro-LED circuit has the shortest turn-on time and greater advantages. When compared with a micro-LED driven by an access current-limiting resistor, a micro-LED driven by a direct drive has a smaller on-time value and greater advantages.

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Correction: Huang et al. High-Uniform and High-Efficient Color Conversion Nanoporous GaN-Based Micro-LED Display with Embedded Quantum Dots. Nanomaterials 2021, 11, 2696

Abstract: The authors wish to make following corrections in this paper [...]

Cited by 2 publications

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Self-array of one-dimensional GaN nanorods using the electric field on dielectrophoresis for the photonic emitters of display pixel

Self-array of one-dimensional GaN nanorods using the electric field on dielectrophoresis for the photonic emitters of display pixel

Research on Simulation Design of MOS Driver for Micro-LED

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