Correction: Role of polysilicon in poly-Si/SiO_x passivating contacts for high-efficiency silicon solar cells

Abstract

Correction for ‘Role of polysilicon in poly-Si/SiOx passivating contacts for high-efficiency silicon solar cells’ by HyunJung Park et al., RSC Adv., 2019, 9, 23261–23266. DOI: 10.1039/c9ra03560e

Recent advancements in poly-Si/SiOxpassivating contacts for high-efficiency silicon solar cells: technology review and perspectives

“…Typically, the roles of poly-Si include: (1) contact, since varying the poly-Si doping concentration may alter Φ m and result in varying selectivity; (2) acting as a barrier against metallization and in-diffusion, preventing SiO x from being destroyed and avoiding damaging the passivation properties; (3) gettering, enhancing the bulk quality; and (4) providing a field effect, resulting in the formation of a charge-rich area on the Si surface which can repel one kind of carrier. 108…”

“…Numerous studies on the fabrication of TOPCon structures have recently revealed new approaches for minimizing parasitic absorption losses associated with the poly-Si layer. 108 Etching the poly-Si layer, using suitable doping profiles or techniques, and adjusting the annealing processes can all contribute significantly to increasing the performances of TOPCon solar cells.…”