Correction [to “‘Microwave resonance thermomagnetic analysis: A new method for characterizing fine-grained ferromagnetic constituents in lunar materials’ by D. L. Griscom, C. L. Marquardt, and E. J. Friebele”]

Comparaison des effets des irradiations γ, X et UV dans les fibres optiques

“…Ces résultats montrent que les pertes dans l'infrarouge sont duesà une bande d'absorption centrée autour de 1600 nm, attribuée au défaut P 1 relatif au phosphore [23]. Dans le visible et le proche infrarouge, les pertes sont duesà la convolution entre une queue d'absorption s'étendant depuis l'UV et une bande d'absorption centrée autour de 540 nm, elle aussi attribuéeà un défaut phosphore: centre POHC [23]. Nos résultats montrent que les deux types d'irradiation génèrent les mêmes défauts, dans des proportions comparables.…”

Effects of Homogeneous Irradiation of Electron Beam with Low Potential on Microscopic Fracture Resistance of Borosilicate Glass Surface

“…7 is observed in the irradiated silica glass, corresponding to dangling bonds of an E-prime center consisting of a Si-O pair. 14,15) In silica glass, each silicon atom is generally coordinated to four atoms of oxygen, whereas a silicon atom with a dangling bond is coordinated to three atoms of oxygen: A silicon atom site with a dangling bond in silica glass is defined as an E-prime center. HIEBL at 0.22 MGy enhances the intensity of the ESR signal, showing that dangling bonds are formed in the silica glass.…”

“…[11][12][13] Homogeneous irradiation of electron beam with low potential (HIEBL) generates dangling bonds, 14,15) as well as annihilates the crack, resulting in the strengthening. 3,[11][12][13] The high stress resistance to propagate cracks and to nucleate crack origins macroscopically dominates the high fracture resistance.…”

Spatially resolved measurement of high doses in microbeam radiation therapy using samarium doped fluorophosphate glasses

“…The possible atomic models of POHCs are discussed by Griscom. 5 Figure 2(a) shows the spectrum of optical absorption induced by x-ray irradiation, and Figure 2(b) demonstrates that this spectrum may be presented as a sum of several overlapping Gaussians. Three of them marked as G1, G2, and G3 are of particular interest and their average parameters are presented in Table I.…”

“…4 Various papers have demonstrated the possibility of valence conversion of different rare earth ions in a variety of host materials under different forms of excitation such as x-rays, c-, and b-irradiation as well as near-infrared (NIR) optical excitation. [5][6][7][8][9][10] Among the rare earth ions, Sm 3þ to Sm 2þ conversion is of particular interest because the dominant emission bands of Sm 3þ and Sm 2þ ions are very easy to distinguish, all dominant bands are situated in a red region of the spectrum and make a good match to silicon based detectors used in optical measurement. It should be stressed immediately that Sm 3þ !…”