Correction to: Structural and Elastic Properties of α‐(AlxGa1−x)2O3 Thin Films on (11.0) Al2O3 Substrates for the Entire Composition Range

Hassa, Anna; Storm, Philipp; Kneiß, Max; Splith, Daniel; Wenckstern, Holger von; Lorenz, Michael; Grundmann, Marius

doi:10.1002/pssb.202000632

Cited by 2 publications

(2 citation statements)

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“…The monoclinic β-polymorph has attracted most attention of the 6 different polymorphs of Ga2O3, but there is increasing interest in metastable corundum α-Ga2O3 due to its even larger bandgap and compatibility with growth on isomorphous sapphire (α-Al2O3) substrates . The corundum α-Ga2O3 belongs to the trigonal R3c space group (a = 5.05952 Å, c = 13.62480 Å, α = β = γ = 120°) (3)(4)(5) . This highly asymmetric monoclinic structure leads to anisotropic materials properties and challenges in crystal growth, leading to more attention on the α-polytype, which has higher symmetry and more facile epitaxial growth conditions than β-Ga2O3 (1)(2)(3)(4)(5) .…”

Section: Introductionmentioning

confidence: 99%

“…The corundum α-Ga2O3 belongs to the trigonal R3c space group (a = 5.05952 Å, c = 13.62480 Å, α = β = γ = 120°) (3)(4)(5) . This highly asymmetric monoclinic structure leads to anisotropic materials properties and challenges in crystal growth, leading to more attention on the α-polytype, which has higher symmetry and more facile epitaxial growth conditions than β-Ga2O3 (1)(2)(3)(4)(5) . It is known that epitaxial films of α-polytype Ga2O3 grown on m-plane sapphire are stable up to 600 °C anneal temperatures but is metastable and converts to the β-phase after annealing at 800 °C (26) , but this allows a practical window for device processing and many reports of alpha polytype devices exist.…”

Section: Introductionmentioning

confidence: 99%

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Determination of Type II Band Alignment of NiO/α-Ga₂O₃ For Annealing Temperatures Up To 600°C

Xia¹,

Li²,

Chiang³

et al. 2023

ECS Trans.

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There is increasing interest in the alpha polytype of Ga2O3 because of its even larger bandgap than the more studied beta polytype, but in common with the latter, there is no viable p-type doping technology. One option is to use p-type oxides to realize heterojunctions and NiO is one of the candidate oxides. The band alignment of sputtered NiO on α-Ga2O3 remains type II, staggered gap for annealing temperatures up to 600°C, showing that this a viable approach for hole injection in power electronic devices based on the alpha polytype of Ga2O3. The magnitude of both the conduction and valence band offsets increase with temperature up to 500°C, but then are stable to 600°C. For the as-deposited NiO/ α-Ga2O3 heterojunction, ΔEV=-2.8 eV and ΔEC= 1.6 eV, while after 600°C annealing the corresponding values are ΔEV=-4.4 eV and ΔEC= 3.02 eV. These values are 1-2 eV larger than for the NiO/β-Ga2O3 heterojunction.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Determination of Type II Band Alignment of NiO/α-Ga₂O₃ For Annealing Temperatures Up To 600°C

Xia¹,

Li²,

Chiang³

et al. 2023

ECS Trans.

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Flexible hardware concept of pulsed laser deposition for large areas and combinatorial composition spreads

Lorenz,

Hochmuth,

von Wenckstern

et al. 2023

Review of Scientific Instruments

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Pulsed laser deposition (PLD) is one of the most flexible physical growth techniques for thin films of functional materials at the research and demonstrator level. We describe here a relatively simple and reliable concept of the PLD hardware that allows both deposition on large areas up to 4 in. diameter and deposition of tailored lateral and vertical composition spreads without time-consuming hardware changes. Different PLD approaches have been implemented in various chambers via specific and correlated computer-controlled movements of the target, substrate, and masks in conjunction with an appropriate target phase composition. The design of the chambers benefits from our long-term experience to find the most reliable solutions for the critical mechanical and high-temperature parts.

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Correction to: Structural and Elastic Properties of α‐(Al_xGa_1−x)₂O₃ Thin Films on (11.0) Al₂O₃ Substrates for the Entire Composition Range

Cited by 2 publications

References 1 publication

Determination of Type II Band Alignment of NiO/α-Ga₂O₃ For Annealing Temperatures Up To 600°C

Determination of Type II Band Alignment of NiO/α-Ga₂O₃ For Annealing Temperatures Up To 600°C

Flexible hardware concept of pulsed laser deposition for large areas and combinatorial composition spreads

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Correction to: Structural and Elastic Properties of α‐(AlxGa1−x)2O3 Thin Films on (11.0) Al2O3 Substrates for the Entire Composition Range

Cited by 2 publications

References 1 publication

Determination of Type II Band Alignment of NiO/α-Ga2O3 For Annealing Temperatures Up To 600°C

Determination of Type II Band Alignment of NiO/α-Ga2O3 For Annealing Temperatures Up To 600°C

Flexible hardware concept of pulsed laser deposition for large areas and combinatorial composition spreads

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Product

Resources

About

Correction to: Structural and Elastic Properties of α‐(Al_xGa_1−x)₂O₃ Thin Films on (11.0) Al₂O₃ Substrates for the Entire Composition Range

Determination of Type II Band Alignment of NiO/α-Ga₂O₃ For Annealing Temperatures Up To 600°C

Determination of Type II Band Alignment of NiO/α-Ga₂O₃ For Annealing Temperatures Up To 600°C