Corrections to “An Investigation of Low-Frequency Noise in Complementary SiGe HBTs”

Zhao, Enhai; Krithivasan, R.; Sutton, A.K.; Jin, Zhiyang; Cressler, John D.; El-Kareh, Badih; Balster, S.; Yasuda, Hiroshi

doi:10.1109/ted.2006.877207

Cited by 3 publications

(21 citation statements)

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“…exp(t IFO /λ), proposed in [14] empirically, can also fit some data. This is illustrated with another dash-line which fits the triangles in Figure 4 for the noise in SiGe HBTs [33,34]. The values for λ, however, scatter; λ≈0.5nm for the data from [14] (open diamonds in Figure 4), while λ≈0.4-0.5nm…”

Section: Iii2 Differences In Bjt Fabrication Ifomentioning

confidence: 81%

“…for the data from [33,34] (solid triangles in Figure 4), reaching a value, which is difficult to explain physically, even for the direct tunneling of holes. The effective mass of holes is high in SiO 2 and therefore have shorter tunneling attenuation distance λ<0.1nm.…”

Section: Iii2 Differences In Bjt Fabrication Ifomentioning

confidence: 95%

“…The second factor for deviation of noise level around the trend in Figure 2 can be attributed to differences in the fabrication of BJT. The impact of several technology steps on the low-frequency noise in polysilicon emitter BJTs was reviewed several times, for example in [31], and extensively analyzed in the past [18,19,20,21,32,33,34,35,36,37,38,39,40]. From these studies, it is found that among the many sources that can contribute to the low-frequency noise, such as fluctuation in diffusion, surface recombination and charge trapping, the major noise source is associated with or located in the interfacial oxide (IFO) between poly and monosilicon layers in the emitter of BJT.…”

Section: Iii2 Differences In Bjt Fabrication Ifomentioning

confidence: 99%

“…Observe that a small increase of t IFO with about 0.5nm results in a large increase in the level of the low-frequency noise, approximately 2 decades for the values of the noise coefficient K F . A better view of the data in npn BJTs is given in Figure 4, together with data for other types of BJT from [32,33,34], and the data are analyzed in a manner similar to previous discussion in [29]. The data are available in numerical form in [41].…”

Section: Iii2 Differences In Bjt Fabrication Ifomentioning

confidence: 99%

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Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

2022

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Section: Iii2 Differences In Bjt Fabrication Ifomentioning

confidence: 81%

Section: Iii2 Differences In Bjt Fabrication Ifomentioning

confidence: 95%

Section: Iii2 Differences In Bjt Fabrication Ifomentioning

confidence: 99%

Section: Iii2 Differences In Bjt Fabrication Ifomentioning

confidence: 99%

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Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

2022

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“…Previous studies [5], [6] of C-SiGe devices focused exclusively on the dependence of noise on transistor size and temperature, and on the degradation of the low frequency noise after 63.3 MeV proton irradiation. The present work addresses more generally the impact of irradiation on the AC and DC device performance, particularly as it relates to analog circuit design, as well as inherent differences between npn and pnp device response.…”

mentioning

confidence: 99%

The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI

Bellini

Jun

Sutton

et al. 2007

IEEE Trans. Nucl. Sci.

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The impact of 63.3 MeV proton and 10 keV x-ray irradiation on the DC and AC performance of complementary ( + ) SiGe HBTs on thick-film SOI is investigated. Proton and x-ray induced changes in the forward and inverse Gummel characteristics, the output characteristics, and avalanche multiplication are reported for both npn and pnp SiGe HBTs, at both room temperature (300 K) and at cryogenic temperatures (down to 30 K). Comparison of room temperature and cryogenic data suggests interface trap formation at two distinct physical locations in the transistors. Experimental data and calibrated TCAD simulations are used to compare the radiation response of both thick-film SOI devices and thin-film SOI SiGe HBTs.

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Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors

Hsieh

Hsin

Chan

et al. 2007

jjap

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In this study, we investigated the low-frequency noise in SiGe heterojunction bipolar transistors (HBTs) with and without a selectively implanted collector (SIC). By comparing the magnitude of 1= f noise, collector current, and current gains of the SiGe HBTs with and without SIC, we show that the impurities at the collector produced by the incomplete activation of the implanted ions cause an increase in the collector current 1= f noise spectrum. Thus, SiGe HBT with SIC exhibits higher collector noise current spectra due to the inactive ions in the collector. The figures-of-merit of noise corner frequency ( f C ) to cutoff frequency ratio ( f T ), f C = f T , indicates that the SiGe HBT without SIC has a better low-frequency noise property for circuit application prior to the f T roll-off. Furthermore, at the onset of high injection effect, the conspicuous degradation of high-frequency properties also deteriorates the f C = f T ratio of SiGe HBT without SIC.

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Corrections to “An Investigation of Low-Frequency Noise in Complementary SiGe HBTs”

Cited by 3 publications

References 1 publication

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

Low-frequency noise in downscaled silicon transistors: Trends, theory and practice

The Effects of Proton and X-Ray Irradiation on the DC and AC Performance of Complementary (npn + pnp) SiGe HBTs on Thick-Film SOI

Low-Frequency Noise Properties of SiGe Heterojunction Bipolar Transistors

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