1997
DOI: 10.1103/physrevb.56.7339
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Correlatedab initiocalculations for ground-state properties of II-VI semiconductors

Abstract: Correlated ab-initio ground-state calculations, using relativistic energy-consistent pseudopotentials, are performed for six II-VI semiconductors. Valence (ns, np) correlations are evaluated using the coupled cluster approach with single and double excitations. An incremental scheme is applied based on correlation contributions of localized bond orbitals and of pairs and triples of such bonds. In view of the high polarity of the bonds in II-VI compounds, we examine both, ionic and covalent embedding schemes fo… Show more

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Cited by 38 publications
(29 citation statements)
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“…The cinnabar structure is found to be an intermediate phase between the ZB and the RS structures of ZnSe, a behavior which was previously associated only with the Te and Hg based II-VI compounds. [42] The structural parameters of the cinnabar form of ZnSe have very similar behavior as those found in Ref. 41.…”
Section: Structural Properties Of Znse Solidsupporting
confidence: 53%
“…The cinnabar structure is found to be an intermediate phase between the ZB and the RS structures of ZnSe, a behavior which was previously associated only with the Te and Hg based II-VI compounds. [42] The structural parameters of the cinnabar form of ZnSe have very similar behavior as those found in Ref. 41.…”
Section: Structural Properties Of Znse Solidsupporting
confidence: 53%
“…For the correlation calculation we have chosen a basis set of vtz quality with a 2d1f polarisation basis set (for details see Refs. [39,42,41]). With this basis set we calculate approximately 82% of the correlation contributions to the cohesive energies.…”
Section: Cohesive Energy Of Polar Semiconductorsmentioning
confidence: 97%
“…The critical cases are substances with intermediate binding character like the II-VI semiconductors where a charge transfer of about one electron occurs or transition metal oxides like rutile (TiO 2 ), where the oxygen atom is not charged fully 2-. For the series ZnS, ZnSe and ZnTe of II-VI semiconductors, where the ionicity decreases and the delocalisation of the bonds increases, we tested and compared different embedding [42]: We have checked the simple embedding with hydrogen atoms only (X 4 Y 4 H 18 clusters); a more sophisticated embedding with a shell of Zn and chalconide atoms in a minimal basis set, where only the outer shell is saturated with hydrogen atoms resulting in a X 13 Y 13 H 30 cluster; finally an embedding with point charges. In the latter embedding one shell of Zn-atoms with a minimal valence basis [1s1p] is added in the surrounding of the negatively charged ions to allow the electrons to delocalise and hybridise with the neighbours as it occurs in the real solid.…”
Section: Construction Of the Embeddingmentioning
confidence: 99%
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“…Although there are many reports of ab-initio calculations of Cd and Te compounds, including c-CdTe, 20,21,22,23 l-CdTe, 24 c-CdO 22,25,26,27,28,29 and TeO n clusters 30,31,32,33,34,35,36 , the crystalline TeO 2 and the ternary compounds remain largely unexplored. Only one ab-initio study of a CdTe-O system, which addresses the O adsorption on CdTe surfaces, is known to the authors.…”
Section: Introductionmentioning
confidence: 99%